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PDF TLP741J Data sheet ( Hoja de datos )
| Número de pieza | TLP741J | |
| Descripción | Photocoupler | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TLP741J (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Photocoupler GaAs IRed & Photo-Thyristor
TLP741J
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
TLP741J
Unit in mm
The TOSHIBA TLP741J consists of a photo−thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP
package.
• Peak off−state voltage: 600 V (min.)
• Trigger LED current: 10 mA (max.)
• On−state current: 150 mA (max.)
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 2002
Certificate no. 8877
BS EN60950-1: 2002
Certificate no. 8878
Isolation voltage: 4000 Vrms (min.)
• Option (D4) type
VDE approved: DIN EN 60747-5-2
Certificate no. 40009302
Maximum operating insulation voltage: 630 VPK
Highest permissible over voltage: 6000 VPK
(Note) When a EN 60747-5-2 approved type is needed,
please designate the “option (D4)”
• Creepage distance:
7.62 mm pich
standard type
7.0 mm (min.)
Clearance:
7.0 mm (min.)
Insulation thickness: 0.5 mm (min.)
10.16 mm pich
(LF2) type
8.0 mm (min.)
8.0 mm (min.)
0.5 mm (min.)
Pin Configuration (top view)
16
25
34
1 : ANODE
2 : CATHODE
3 : N.C.
4 : CATHODE
5 : ANODE
6 : GATE
1
TOSHIBA
11−7B1
Weight: 0.35 g (typ.)
2007-10-01
1 page  
TLP741J
ton – IF
30
Ta = 25°C
RL = 100Ω
VAA = 50V
20
RGK = 10kΩ
10
27kΩ
0
0 10 20 30 40
Forward current IF (mA)
IFT – Ta
20
VAK = 6V
RL = 100Ω
10
RGK = 10kΩ
27kΩ
5
3
0 20 40 60 80 100
Ambient temperature Ta (°C)
IH – Ta
0.7
0.5 RGK = 10kΩ
0.3 27kΩ
dv / dt – RGK
200
VAK = 200V
100
400V
50
30
10
Ta = 25°C
5
1
35
10
30 50
100
Gate-cathode resistance RGK (kΩ)
IFT – RGK
100
Ta = 25°C
VAK = 6V
50 RL = 100Ω
30
10
5
2
1
35
10
30 50 100 200
Gate-cathode resistance RGK (kΩ)
0.1
0 20 40 60 80 100
Ambient temperature Ta (°C)
500
300
Ta = 85°C
VAK = 400V
RGK = 27kΩ
100
50
30
dv / dt – CGK
10
5
0.001
0.003 0.005
0.01
Gate-cathode capacitance CGK (μF)
IH – RGK
5
Ta = 25°C
3
1
0.5
0.3
0.1
1
35
10
30 50 100 200
Gate-cathode resistance RGK (kΩ)
5 2007-10-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TLP741J.PDF ] | |
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