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Datasheet SGA-9189 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SGA-9189 | Silicon Germanium HBT Amplifier Preliminary Preliminary
Product Description
Sirenza Microdevices’ SGA-9189 is a high performance amplifier designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiG | ETC | amplifier |
2 | SGA-9189 | Reliability Qualification Report Reliability Qualification Report
SGA-9189
Products Qualified by Similarity
SGA-9289
March, 2001
522 Almanor Ave., Sunnyvale, Ca 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
SGA-9189 Reliability Qualification Report
Introduction Stanford Microdevices’ SGA-9189 is a high performance | Stanford Microdevices | data |
3 | SGA-9189Z | Medium Power Discrete SiGe Transistor Product Description
Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is | Sirenza Microdevices | transistor |
SGA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SGA | ARINC 600 Rack and Panel Connectors
ARINC 600 Rack and Panel Connectors
Available Rear Release/Rear Removable Front Release/Front Removable Low Insertion force contacts. Both environmental and non-environmentl versions. Polarizing post that are removable from the mating face. Field replaceble inserts. Up to 150 Si ITT Industries connector | | |
2 | SGA-0163 | Silicon Germanium Cascadeable Gain Block Preliminary
SGA-0163
Product Description
The SGA-0163 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctio Sirenza Microdevices data | | |
3 | SGA-0163Z | Silicon Germanium Cascadeable Gain Block Preliminary
SGA-0163
Product Description
The SGA-0163 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctio Sirenza Microdevices data | | |
4 | SGA-0363 | DC 5000 MHZ SILICON GERMANIUM CASCADEABLE GAIN BLOCK Product Description
Stanford Microdevices SGA-0363 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GH ETC data | | |
5 | SGA-0363Z | Silicon Germanium Cascadeable Gain Block Preliminary
SGA-0363
Product Description
The SGA-0363 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctio Sirenza Microdevices data | | |
6 | SGA-1163 | DC-6000 Mhz Silicon Germanium HBT Cascadeable Gain Block Preliminary
Product Description
SGA-1163
Sirenza Microdevices SGA-1163 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for applications to 6 GHz. This RFIC is a 2-stage design that provides high isolation Sirenza Microdevices data | | |
7 | SGA-1263 | DC-4000 MHZ SILICON GERMANIUM HBT CASCADEABLE GAIN BLOCK Preliminary
Product Description
SGA-1263
Sirenza Microdevices SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. This RFIC is a 2-stage design that provides high isolation ETC data | |
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Número de pieza | Descripción | Fabricantes | |
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