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PDF 2SD2657 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2657 | |
| Descripción | Low frequency amplifier | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
Low frequency amplifier
2SD2657
2SD2657
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) ≦ 350mV
At IC = 1A / IB = 50mA
zExternal dimensions (Units : mm)
Each lead has
0.4 same dimensions
(3)
(2) (1)
0.95 0.95
1.9
2.9
1.0MAX
0.7
0~0.1
0.16
ROHM : TSMT3 Abbreviated symbol : FZ (1) Emitter
(2) Base
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
30
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
30
6
Collector current
IC 1.5
ICP 3
Power dissipation
PC
500
1∗2
Junction temperature
Tj 150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, PW=1ms
∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate
Unit
V
V
V
A
A∗1
mW
W
°C
°C
zPackaging specifications
Package
Code
Type
Basic ordering unit (pieces)
2SD2657
Taping
TL
3000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
30
30
6
−
−
−
270
−
−
Typ.
−
−
−
−
−
140
−
300
11
Max.
−
−
−
100
100
350
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=30V
VEB=6V
IC=1A, IB=50mA
VCE=2V, IC=100mA ∗
VCE=2V, IE=−100mA, f=100MHz ∗
VCB=10V, IE=0A, f=1MHz
Rev.A
1/2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD2657.PDF ] | |
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