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PDF 2SD2457 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2457 | |
| Descripción | Silicon PNP epitaxial planer type(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Transistor
2SD2457
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
q High collector to emitter voltage VCEO.
q Large collector power dissipation PC.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage VCEO
40
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
3A
Collector current IC 1.5 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1Y
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
IEBO
VCBO
VCEO
hFE*1
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = 20V, IE = 0
VCE = 10V, IB = 0
VEB = 5V, IE = 0
IC = 1mA, IE = 0
IC = 2mA, IB = 0
VCE = 5V, IC = 1A*2
IC = 1.5A, IB = 0.15A*2
IC = 2A, IB = 0.2A*2
VCB = 5V, IE = –0.5A*2, f = 200MHz
VCB = 20V, IE = 0, f = 1MHz
min
50
40
80
*1hFE Rank classification
Rank
Q
R
hFE 80 ~ 160 120 ~ 220
typ max Unit
1 µA
100 µA
10 µA
V
V
120 220
1V
1.5 V
150 MHz
45 pF
*2 Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2457.PDF ] | |
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