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PDF 2SD2441 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2441 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency output amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD2441 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SD2441
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
s Features
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
4.5±0.1
1.6±0.2
45°
1.5±0.1
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
10
V
Collector to emitter voltage VCEO
10
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
2A
Collector current IC 1.5 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1V
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
VCBO
VCB = 7V, IE = 0
IC = 10µA, IE = 0
1 µA
10 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
VCEO
VEBO
hFE
VCE(sat)
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 1V, IC = 400mA*2
IC = 1A, IB = 25mA*2
10
7
200 700
0.17 0.25
V
V
V
Transition frequency
fT VCB = 60V, IE = –50mA, f = 200MHz
190 MHz
Collector output capacitance
Forward voltage
Cob
VF*1
VCB = 10V, IE = 0, f = 1MHz
IF = 500mA
50 pF
1.3 V
*1 Applicable to the built-in diode.
*2 Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2441.PDF ] | |
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