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PDF 2SD2416 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2416 | |
| Descripción | Silicon NPN epitaxial planer type darlington(For low-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD2416
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Unit: mm
s Features
q High foward current transfer ratio hFE.
q 60V zener diode built in between collector and base.
q Darlington connection.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
Collector to emitter voltage
VCBO
VCEO
60–+1205
60–+1205
V
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5 A
Collector current
IC
1A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1T
Internal Connection
C
B
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCBO
VCEO
hFE
VCE(sat)
VBE(sat)
fT
Conditions
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
VCE = 10V, IC = 1.0A*
IC = 1.0A, IB = 1.0mA*
IC = 1.0A, IB = 1.0mA*
VCB = 10V, IE = –50mA, f = 200MHz
min
50
50
6500
E
typ max Unit
1 µA
2 mA
85 V
85 V
40000
1.8 V
2.2 V
150 MHz
*2 Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2416.PDF ] | |
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