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PDF 2SK3560 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3560 | |
| Descripción | Silicon N-channel power MOSFET For PDP/For high-speed switching | |
| Fabricantes | Panasonic Semiconductor | |
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Hay una vista previa y un enlace de descarga de 2SK3560 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Power MOSFETs
2SK3560
Silicon N-channel power MOSFET
For PDP/For high-speed switching
10.5±0.3
Unit: mm
4.6±0.2
1.4±0.1
■ Features
• Low on-resistance, low Qg
• High avalanche resistance
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Power
dissipation
Ta = 25°C
Channel temperature
Storage temperature
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
230
±30
30
120
50
3
150
−55 to +150
Unit
V
V
A
A
W
°C
°C
1.4±0.1
0.8±0.1
2.54±0.3
2.5±0.2
0 to 0.3
123
(10.2)
(8.9)
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Internal Connection
D
G
■ Electrical Characteristics TC = 25°C ± 3°C
S
Parameter
Symbol
Conditions
Min Typ Max Unit
Gate-drain surrender voltage
Diode forward voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
VDSS
VDSF
Vth
IDSS
IGSS
RDS(on)
Yfs
Ciss
ID = 1 mA, VGS = 0
IDR = 30 A, VGS = 0
VDS = 25 V, ID = 1 mA
VDS = 184 V, VGS = 0
VGS = ±30 V, VDS = 0
VGS = 10 V, ID = 15 A
VDS = 25 V, ID = 15 A
VDS = 25 V, VGS = 0, f = 1 MHz
230
−1.5
24
100
±1
55 74
8 19
2 330
V
V
V
µA
µA
mΩ
S
pF
Short-circuit output capacitance
(Common-source)
Coss
356 pF
Reverse transfer capacitance
(Common-source)
Crss
44 pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
td(on)
tr
td(off)
tf
trr
Qrr
VDD ≈ 100 V, ID = 15 A
RL ≈ 6.7 Ω, VGS = 10 V
L = 230 µH, VDD = 100 V
IDR = 15 A, di /dt = 100 A/ µs
39 ns
37 ns
221 ns
46 ns
164 ns
853 nC
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
SJG00033AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK3560.PDF ] | |
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