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PDF 2SK2598 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2598 | |
| Descripción | Silicon N Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2598 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK2598
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2598
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance
: RDS (ON) = 0.18 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 13 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 250 V)
z Enhancement mode
: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
250
250
±20
13
52
60
148
13
6
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may
cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
2.08 °C / W
83.3 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.48 mH, RG = 25 Ω, IAR = 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2009-09-29
1 page  
2SK2598
RG = 25 Ω
VDD = 50 V, L = 1.48 mH
E AS
=
1
2
⋅ L ⋅ I2
⋅
⎜⎛
⎝
B
B VDSS
VDSS − VDD
⎟⎞
⎠
5 2009-09-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK2598.PDF ] | |
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