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PDF 2SK2511 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2511 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2511
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2511 is N-Channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super Low On-Resistance
RDS (on)1 = 27 mΩ (VGS = 10 V, ID = 20 A)
RDS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A)
• Low Ciss Ciss = 1 210 pF TYP.
• Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID (DC)
±40
A
Drain Current (pulse)*
ID (pulse) ±160
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
80 W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
PACKAGE DIMENSIONS
(in millimeter)
15.7 MAX. 3.2±0.2
4
4.7 MAX.
1.5
123
2.2±0.2
5.45
1.0±0.2 0.6±0.1 2.8±0.1
5.45
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device is
actually used, an additional protection circuit is externally re-
quired if a voltage exceeding the rated voltage may be applied to
this device.
Document No. D10295EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
60 VGS = 4 V
40 VGS = 10 V
20
ID = 20 A
0
–50 0 50 100 150
Tch - Channel Temperature - °C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
Ciss
Coss
100 Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt =100 A/µs
VGS = 0
100
10
1.0
0.1
1.0 10
ID - Drain Current - A
100
2SK2511
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1 VGS = 0V
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td(on)
tf
tr
td(off)
VDD =30 V
VGS =10 V
RG =10 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
ID = 40 A
14
60
VGS
VDD = 12 V
30 V
40 48 V
VDS
12
10
8
6
20 4
2
0
0 20 40 60 80
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2511.PDF ] | |
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