|
|
Número de pieza | 2SK2339 | |
Descripción | Silicon N-Channel Power F-MOS | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK2339 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Power F-MOS FETs
2SK2339
2SK2339
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
8.5±0.2
6.0±0.5
Unit : mm
3.4±0.3
1.0±0.1
s Applications
q Non-contact relay
q Solenoid drive
q Motor drive
q Control equipment
q Switching mode regulator
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
1.1max.
0.5max.
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Symbol
Rating
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability
VDSS
VGSS
ID
IDP
EAS *
80±10
±15
±10
±20
62.5
Allowable power
dissipation
TC= 25˚C
Ta= 25˚C
PD
30
1.3
Channel temperature
Storage temperature
* L= 5mH, IL= 5A, 1 pulse
Tch 150
Tstg –55 to +150
Unit
V
V
A
A
mJ
W
˚C
˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter
Symbol
Condition
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
IDSS
IGSS
VDSS
Vth
RDS(on)1
RDS(on)2
| Yfs |
VDSF
trr
Qrr
Ciss
Coss
Crss
ton
tf
td(off)
Rth(ch-c)
Rth(ch-a)
VDS= 70V, VGS= 0
VDS= 0, VGS=15V
ID=1mA, VGS= 0
VDS=10V, ID=1mA
VGS=10V, ID= 5A
VGS= 4V, ID= 5A
VDS=10V, ID= 5A
IDR=10A, VGS= 0
L=230µ H, VDD= 30V, VGS= 0
IDR=10A, di/dt= 80A/µ s
VDS=10V, VGS= 0, f= 1MHz
VDD= 30V, ID= 5A
VGS=10V, RL= 6Ω
1 : Gate
2 : Collector
3 : Emitter
N Type Package
s Equivalent Circuit
D
G
S
Min Typ Max Unit
10 µ A
±10 µ A
70 90 V
1 2.5 V
150 230
mΩ
230 370
mΩ
3 5.5
S
–1.8 V
0.55 µ s
2.2 µ s
85 pF
250 pF
20 pF
0.5 µ s
0.9 µ s
1.9 µ s
4.2 ˚C/W
96 ˚C/W
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SK2339.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK2331 | N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
2SK2332 | N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
2SK2333 | HVX-2 Series Power MOSFET(700V 6A) | Shindengen Electric Mfg.Co.Ltd |
2SK2333 | N-Channel MOSFET Transistor | Inchange Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |