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PDF CXK591000M-55LL Data sheet ( Hoja de datos )
| Número de pieza | CXK591000M-55LL | |
| Descripción | 131/072-word X 9-bit High Speed CMOS Static RAM | |
| Fabricantes | Sony Corporation | |
| Logotipo |  |
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CXK591000TM/YM/M -55LL/70LL/10LL
131,072-word × 9-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
The CXK591000TM/YM/M is a high speed CMOS
static RAM organized as 131,072-words by 9 bits.
A polysilicon TFT cell technology realized
extremely low stand-by current and higher data
retention stability.
Special feature are low power consumption and
high speed.
The CXK591000TM/YM/M is a suitable RAM for
portable equipment with battery back up and parity
bit.
CXK591000TM
32 pin TSOP (PIastic)
CXK591000YM
32 pin TSOP (PIastic)
CXK591000M
32 pin SOP (PIastic)
Features
• Fast access time
CXK591000TM/YM/M
(Access time)
-55LL
55ns (Max.)
-70LL
70ns (Max.)
-10LL
100ns (Max.)
• Low standby current
CXK591000TM/YM/M
-55LL/70LL/10LL
24µA (Max.)
• Low data retention current
CXK591000TM/YM/M
-55LL/70LL/10LL
14µA (Max.)
• Single +5V supply: 5V ± 10%.
• Low voltage date retention: 2.0V (Min.)
• Broad package line-up
CXK591000TM/YM
8mm × 20mm 32 pin TSOP Package
CXK591000M
525mil 32 pin SOP
Package
Function
131072 word × 9 bit static RAM
Structure
Silicon gate CMOS IC
Block Diagram
A10
A11
A9
A8
A13
A15
A16
A14
Buffer
Row
Decoder
Memory
Matrix
1024 × 1152
VCC
GND
A12
A7
A6
A5
A4
A3 Buffer
A2
A1
A0
OE
Buffer
WE
CE1
CE2
I /O Gate
Column
Decoder
I /O Buffer
I/O1 I/O9
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E93X06-PS
1 page  
CXK591000TM/YM/M
• Read cycle (WE = "H")
-55LL
-70LL
-10LL
Item Symbol
Unit
Min. Max. Min. Max. Min. Max.
Read cycle time
tRC 55 — 70 — 100 — ns
Address access time
tAA — 55 — 70 — 100 ns
Chip enable access time (CE1)
tCO1 — 55 — 70 — 100 ns
Chip enable access time (CE2)
tCO2 — 55 — 70 — 100 ns
Output enable to output valid
tOE — 30 — 40 — 50 ns
Output hold from address change
tOH 15 — 15 — 15 — ns
Chip enable to output in low Z (CE1, CE2) tLZ1, tLZ2 10 — 10 — 10 — ns
Output enable to output in low Z (OE)
tOLZ
5 — 5 — 5 — ns
Chip disable to output in high Z (CE1, CE2) tHZ1, tHZ2∗ — 25 — 25 — 35 ns
Output disable to output in high Z (OE)
tOHZ∗
— 25 — 25 — 35 ns
∗ tHZ1, tHZ2 and tOHZ are defined as the time required for outputs to turn to high impedance state and are not
referred to as output voltage levels.
• Write cycle
Item
Write cycle time
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Symbol
tWC
tAW
tCW
tDW
tDH
tWP
-55LL
Min. Max.
55 —
50 —
50 —
25 —
0—
40 —
-70LL
Min. Max.
70 —
60 —
60 —
30 —
0—
50 —
-10LL
Unit
Min. Max.
100 — ns
70 — ns
70 — ns
40 — ns
0 — ns
60 — ns
Address setup time
tAS 0 — 0 — 0 — ns
Write recovery time (WE)
tWR 0 — 0 — 0 — ns
Write recovery time (CE1, CE2)
tWR1
0 — 0 — 0 — ns
Output active from end of write
tOW 10 — 10 — 10 — ns
Write to output in high Z
tWHZ∗
— 25 — 25 — 30 ns
∗ tWHZ is defined as the time required for outputs to turn to high impedance state and is not referred to as
output voltage level.
–5–
5 Page 
Standby current vs. Supply voltage
2.0
1.5
1.0
ISB1
ISB2
0.5
Ta = 25°C
0
2.0
3.0 4.0 5.0
VCC – Supply voltage (V)
6.0
Input voltage level vs. Supply voltage
1.2
1.1
VIL, VIH
1.0
0.9
Ta = 25°C
0.8
4.5
4.75 5.0
5.25
VCC – Supply voltage [V]
5.5
Output high current vs. Output high voltage
1.4
1.2
1.0
Vcc = 5.0V
Ta = 25°C
0.8
0.6
1
234
VOH – Output high voltage [V]
5
CXK591000TM/YM/M
Standby current vs. Ambient temperature
20
10
5
2
1
0.5
Vcc = 5.0V
0.2
0
20 40 60
Ta – Ambient temperature [°C]
80
Standby current vs. Ambient temperature
1.4
1.2
1.0
0.8
Vcc = 5.0V
0.6
0
20 40 60
Ta – Ambient temperature [°C]
80
Output low current vs. Output low voltage
1.8
1.4
1.0
0.6
0
Vcc = 5.0V
Ta = 25°C
0.2 0.4 0.6
VOL – Output low voltage [V]
0.8
– 11 –
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet CXK591000M-55LL.PDF ] | |
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