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Datasheet 1N5061 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5061 | Plastic Silicon Rectifier 1N5059-1N5062
Plastic Silicon Rectifier
VOLTAGE RANGE: 200---800 V CURRENT: 2.0 A
Features
Low cost Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand and s im ilar s olvents
DO - 15
Mechanical Data
Cas e: JE |  LGE | rectifier |
| 2 | 1N5061 | GLASS PASSIVATED SILICON RECTIFIERS 1N5059 1N5061 1N5060 1N5062 GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 800 VOLT
GPR-1A CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package, designed for |  Central Semiconductor | rectifier |
| 3 | 1N5061 | STANDARD AVALANCHE DIODE 1N5059-1N5062
High-reliability discrete products and engineering services since 1977
STANDARD AVALANCHE DIODE
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard |  Digitron Semiconductors | diode |
| 4 | 1N5061 | GLASS PASSIVATED JUNCTION RECTIFIER 1N5059 THRU 1N5062
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 200 to 800 Volts
D TE *
DO-204AP
Forward Current - 1. 0 Ampere
FEATURES
♦ High temperature metallurgically bonded construction ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA ♦ |  General Semiconductor | rectifier |
| 5 | 1N5061 | Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
1N5059 to 1N5062 Controlled avalanche rectifiers
Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 19
Philips Semiconductors
Product specification
Controlled avalanche rectifier |  NXP Semiconductors | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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