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Datasheet 1N5915A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N5915A | AXIAL LEADED SILICON ZENER DIODES 1N5913A - 1N5957A
AXIAL LEADED SILICON ZENER DIODES
VOLTAGE RANGE: 3.3 - 240V POWER: 1.5Wa t t s
Features
! Complete Voltage Range 3.3 to 240 Volts ! High peak reverse power dissipation ! High reliability
! Low leakage current
Mechanical Data
! Case: D O - 4 1 Molded Plastic ! Terminals: Plated Lea | Sunmate | diode |
2 | 1N5915A | Zener Diodes 1N5913A-1N5956A
Zener Diodes
POWER DISSIPATION: 1.5W
DO - 41
Features
Silicon planar power zener diodes No suffix indicates a ±20% tolerance on nominal Vz. Suffix "A" denotes a 1 0%,Suffix "B" denotes a 5%, Suffix "C" denotes a 2%,Suffix "D" denotes a 1%.
Mechanical Data
Case:DO-41 Terminals: So | LGE | diode |
3 | 1N5915A | 1.5 WATT ZENER DIODES 1N5913A-1N5956A
High-reliability discrete products and engineering services since 1977
1.5 WATT ZENER DIODES
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, | Digitron Semiconductors | diode |
4 | 1N5915A | SILICON ZENER DIODES 1N5913A - 1N5957A
VZ : 3.3 - 240 Volts PD : 1.5 Watts
FEATURES :
* Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
0.205 (5.2) 0.166 (4.2)
MECHANICAL DATA | EIC discrete Semiconductors | diode |
5 | 1N5915A | Diode Zener Single 3.9V 10% 1.5W 2-Pin DO-41 | New Jersey Semiconductor | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re Unisonic Technologies mosfet | | |
4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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Número de pieza | Descripción | Fabricantes | |
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