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Datasheet 2N2480 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N2480 | DUAL AMPLIFIER TRANSISTOR MAXIMUM RATINGS
Rating
2N2060,A Symbol 2N2223,A 2N2480 2N2480A
Collector-Emitter Voltage Collector-Emitter Voltage
VCEO
60
40
40
VCER
80
—
-
Collector-Base Voltage
VCBO
100
75
80
Emitter-Base Voltage
VEBO
7.0
5.0
5.0
—Collector Current Continuous
ic
500
One Die
All Die
|  Motorola Semiconductors | transistor |
| 2 | 2N2480 | DUAL NPN TRANSISTORS 2N2480 2N2480A
SILICON DUAL NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2480 and 2N2480A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designe |  Central Semiconductor | transistor |
| 3 | 2N2480A | DUAL AMPLIFIER TRANSISTOR MAXIMUM RATINGS
Rating
2N2060,A Symbol 2N2223,A 2N2480 2N2480A
Collector-Emitter Voltage Collector-Emitter Voltage
VCEO
60
40
40
VCER
80
—
-
Collector-Base Voltage
VCBO
100
75
80
Emitter-Base Voltage
VEBO
7.0
5.0
5.0
—Collector Current Continuous
ic
500
One Die
All Die
| Motorola Semiconductors | transistor |
| 4 | 2N2480A | DUAL NPN TRANSISTORS 2N2480 2N2480A
SILICON DUAL NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2480 and 2N2480A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designe | Central Semiconductor | transistor |
2N2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N20 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N20
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.5Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converte  Inchange Semiconductor mosfet | | |
| 2 | 2N2000 | (2N2000 / 2N2001) alloy-junction germanium transistors w
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 ETC transistor | | |
| 3 | 2N2001 | (2N2000 / 2N2001) alloy-junction germanium transistors w
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ETC transistor | | |
| 4 | 2N2017 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION
VCBO (V)
2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/SWITCH 2N1987 NPN AMPL/SWITCH 2N1988 NPN AMPL/SWITCH 2N1989 NPN AMPL/SWITCH 2N1990 NPN AMPL/SWITCH 2N2017 NPN A Central Semiconductor transistor | | |
| 5 | 2N2017 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
| 6 | 2N2018 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
| 7 | 2N2019 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | |
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