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PDF RU40L10H Data sheet ( Hoja de datos )
| Número de pieza | RU40L10H | |
| Descripción | P-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU40L10H
P-Channel Advanced Power MOSFET
MOSFET
Features
• -40V/-9.5A,
RDS (ON) =19mΩ (Typ.) @ VGS=-10V
RDS (ON) =30mΩ (Typ.) @ VGS=-4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
Pin Description
SOP-8
Applications
• DC-DC Converter.
Absolute Maximum Ratings
P-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
TC=25°C
ID
PD
②
RθJA
Continuous Drain Current(VGS=-10V)
TC=25°C
TC=70°C
Maximum Power Dissipation
TC=25°C
TC=70°C
Thermal Resistance-Junction to Ambient
Rating
-40
±20
150
-55 to 150
-9.5
①
-38
-9.5
-8
3.1
2.0
40
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– OCT., 2011
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU40L10H
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
-VSD - Source-Drain Voltage (V)
Gate Charge
-VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– OCT., 2011
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU40L10H.PDF ] | |
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