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PDF AP85L02H-A Data sheet ( Hoja de datos )
| Número de pieza | AP85L02H-A | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP85L02H/J-A
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
D
G
S
Description
AP88LS02 used advanced design and process to achieve low gate
charge ,lower on-resistance and fast switching performance.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP85L02J-A) is available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
25V
6mΩ
75A
G D S TO-252(H)
G
D
S
Rating
25
±20
75
64
350
96
0.75
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.3
110
Units
℃/W
℃/W
Data & specifications subject to change without notice
200204051
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP85L02H-A.PDF ] | |
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