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PDF AOTS40B65H1 Data sheet ( Hoja de datos )
| Número de pieza | AOTS40B65H1 | |
| Descripción | IGBT | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOKS40B65H1/AOTS40B65H1
650V, 40A Alpha IGBT TM
General Description
• Latest AlphaIGBT (α IGBT) technology
• 650V breakdown voltage
• High efficient turn-on di/dt controllability
• Very high switching speed
• Low turn-off switching loss and softness
• Very good EMI behavior
• Short-circuit ruggedness
Applications
• Power factor correction
• UPS & Solar Inverters
• Very High Switching Frequency Applications
• Welding Machines
Product Summary
VCE
IC (TC=100°C)
VCE(sat) (TJ=25°C)
TO-247
TO-220
650V
40A
1.9V
C
AOKS40B65H1
E
C
G
E
C
G
AOTS40B65H1
G
E
Orderable Part Number Package Type
Form
Minimum Order Quantity
AOKS40B65H1
TO247
Tube
240
AOTS40B65H1
TO220
Tube
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOKS40B65H1/AOTS40B65H1
Units
Collector-Emitter Voltage
V CE
650
V
Gate-Emitter Voltage
Continuous Collector TC=25°C
Current
TC=100°C
V GE
IC
±30
80
40
V
A
Pulsed Collector Current, Limited by TJmax
Turn off SOA, VCE ≤ 650V, Limited by TJmax
I CM
I LM
120
120
A
A
Short circuit withstanding time 1)
VGE = 15V, VCC ≤ 300V, TJ ≤ 175°C
t SC
5
µs
Power Dissipation
TC=25°C
TC=100°C
PD
300
150
W
Junction and Storage Temperature Range
T J , T STG
-55 to 175
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300 °C
Parameter
Symbol
AOKS40B65H1/AOTS40B65H1
Units
Maximum Junction-to-Ambient
R θ JA
Maximum IGBT Junction-to-Case
R θ JC
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
40
0.5
°C/W
°C/W
Rev.1.0: April 2015
www.aosmd.com
Page 1 of 7
1 page  
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
1000
Td(off)
Tf
Td(on)
Tr
10000
1000
Td(off)
Tf
Td(on)
Tr
100 100
10 10
1
20
10
8
6
30 40 50 60 70
IC (A)
Figure 12: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=7.5Ω)
Eoff
Eon
Etotal
80
4
2
0
20
3
2.5
2
30 40 50 60 70
IC (A)
Figure 14: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=7.5Ω)
80
Eoff
Eon
Etotal
1.5
1
0.5
0
25
50 75 100 125 150
TJ (°C)
Figure 16: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=40A,Rg=7.5Ω)
175
1
0 20 40 60 80
Rg (Ω)
Figure 13: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=40A)
5
Eoff
Eon
4 Etotal
3
2
1
0
0
3
2.5
2
20 40 60
Rg (Ω)
Figure 15: Switching Loss vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=40A)
Eoff
Eon
Etotal
80
1.5
1
0.5
0
200
250 300 350 400 450
VCE (V)
Figure 17: Switching Loss vs. VCE
(Tj=175°C,VGE=15V,IC=40A,Rg=7.5Ω)
500
Rev.1.0: April 2015
www.aosmd.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOTS40B65H1.PDF ] | |
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