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Datasheet 1N5550 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N5550 | STANDARD RECOVERY RECTIFIERS 1N5550-1N5554
High-reliability discrete products and engineering services since 1977
STANDARD RECOVERY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), stan | Digitron Semiconductors | rectifier |
2 | 1N5550 | STANDARD RECOVERY GLASS RECTIFIERS 1N5550 thru 1N5554
Available on commercial
versions
VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS
Qualified to MIL-PRF-19500/420
Qualified Levels: JAN, JANTX, JANTXV
and JANS
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified and is ideal for | Microsemi | rectifier |
3 | 1N5550 | GLASS PASSIVATED SILICON RECTIFIERS 1N5550 1N5553 1N5551 1N5554 1N5552
GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general p | Central Semiconductor | rectifier |
4 | 1N5550 | GLASS PASSIVATED JUNCTION RECTIFIER 1N5550 THRU 1N5552
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 200 to 1000 Volts
D *
Forward Current - 3.0 Amperes
FEATURES
P A T
E
N
T
Case Style G4
0.180 (4.6) 0.115 (2.9) DIA.
1.0 (25.4) MIN.
0.300 (7.6) MAX.
♦ Glass passivated cavity-free junction ♦ High temperature metal | General Semiconductor | rectifier |
5 | 1N5550 | HIGH CURRENT AXIAL LEAD RECTIFIERS
SENSITRON _____ SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 126, REV E
1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US
JAN JANTX JANTXV
HIGH CURRENT AXIAL LEAD RECTIFIERS
DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount | Sensitron | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re Unisonic Technologies mosfet | | |
4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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Número de pieza | Descripción | Fabricantes | |
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