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Número de pieza | 2SK1581C | |
Descripción | N-CHANNEL MOSFET FOR SWITCHING | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK1581C (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Preliminary Data Sheet
2SK1581C
N-CHANNEL MOSFET FOR SWITCHING
R07DS1287EJ0200
Rev.2.00
Jul 24, 2015
Description
The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 2.5 V power source.
Features
Directly driven by a 2.5 V power source.
Low on-state resistance
RDS(on)1 = 0.57 MAX. (VGS = 4.5 V, ID = 0.3 A)
RDS(on)2 = 0.60 MAX. (VGS = 4.0 V, ID = 0.3 A)
RDS(on)3 = 0.88 MAX. (VGS = 2.5 V, ID = 0.15 A)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK1581C-T1B-A/AT
-A:Sn-Bi , -AT:Pure Sn
3000p/Reel
SC-59 (3pMM)
Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XL
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Note PW 10 s, Duty Cycle 1%
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
20
12
500
2
200
150
55 to 150
V
V
mA
A
mW
C
C
R07DS1287EJ0200 Rev.2.00
Jul 24, 2015
Page 1 of 5
1 page 2SK1581C
Package Drawings (Unit: mm)
SC-59 (Mini Mold)
2.8 ±0.2
1.5
2
3
0.65
+0.1
–0.15
1
Marking
1. Source
2. Gate
3. Drain
Equivalent Circuit
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
R07DS1287EJ0200 Rev.2.00
Jul 24, 2015
Page 5 of 5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet 2SK1581C.PDF ] |
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