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Datasheet 1SS187 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1SS187 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS187 Switching Diode
FEATURES y Low forward voltage y Fast reverse recovery time
MARKING: D3·
D3
SOT-23
1 3
2
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forwar | JCET | diode |
2 | 1SS187 | SWITCHING DIODE Transys
Electronics
LIMITED
SOT-23 Plastic-Encapsulated Diodes
1SS187 SWITCHING DIODE
FEATURES
Power dissipation
PD : 150 mW(Tamb=25℃) Forward Current
IF: 100 m A Reverse Voltage
VR: 80 V Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
1. 0
| Transys | diode |
3 | 1SS187 | SWITCHING DIODE RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 SWITCHING DIODE
1SS187
FEATURES
* Power dissipation PD: 150 mW(Tamb=25OC)
* Forward current IF: 100 mA
* Reverse voltage VR: 80 V
* Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* | RECTRON | diode |
4 | 1SS187 | SILICON EPITAXIAL PLANAR DIODE 1SS187
SILICON EPITAXIAL PLANAR DIODE
Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance
Applications • Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Peak Reverse Voltage Reverse Voltage Ave | SEMTECH | diode |
5 | 1SS187 | Switching Diodes 1. CATHODE 2. N.C. 3. ANODE
Features
Low forward voltage
: VF(3)=0.92V(typ.)
Fast reverse recovery time : trr=1.6ns(typ.)
MARKING: D3
1SS187
Switching Diodes
SOT-23
Maximum Ratings @TA=25℃
Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Forward Continuous Current Ave | LGE | diode |
1SS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1SS104 | SILICON PLANAR TYPE DIODE Toshiba Semiconductor diode | | |
2 | 1SS106 | SILICON SCHOTTKY BARRIER DIODE 1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Average Forward Current Junction T SEMTECH diode | | |
3 | 1SS106 | Silicon Schottky Barrier Diode 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A)
Rev.2.00 Oct.23.2003
Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal..
Ordering Information
Type No. 1S Renesas diode | | |
4 | 1SS106 | SMALL SIGNAL SCHOTTKY DIODES R SEMICONDUCTOR
1SS106
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits small current rectifier High temperature solderi JINAN JINGHENG ELECTRONICS diode | | |
5 | 1SS106 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS106 Cathode White 2nd band Wh Hitachi Semiconductor diode | | |
6 | 1SS108 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS108
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-154A (Z) Rev. 1 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS108 Cathode White 2nd band Black Mark H Hitachi Semiconductor diode | | |
7 | 1SS110 | Silicon Epitaxial Planar Diode for Tuner Band Switch 1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
T Hitachi Semiconductor diode | |
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