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K3405 の電気的特性と機能

K3405のメーカーはNECです、この部品の機能は「MOSFET ( Transistor ) - 2SK3405」です。


製品の詳細 ( Datasheet PDF )

部品番号
K3405
部品説明
MOSFET ( Transistor ) - 2SK3405
メーカ
NEC
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K3405 Datasheet, K3405 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3405
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3405 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5-V drive available
Low on-state resistance
RDS(on)1 = 9.0 mMAX. (VGS = 10 V, ID = 24 A)
Low gate charge
QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V)
Built-in gate protection diode
Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3405
TO-220AB
2SK3405-ZK
2SK3405-ZJ
TO-263(MP-25ZK)
TO-263(MP-25ZJ)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C )
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
20
±20
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note
www.DataTSohteael tP4Uow.ceomr Dissipation (TA = 25°C)
ID(DC)
ID(pulse)
PT1
±48
±192
1.5
Total Power Dissipation (TC = 25°C) PT2
50
Channel Temperature
Tch 150
Storage Temperature
Tstg 55 to +150
Note PW 10 µs, Duty Cycle 1%
V
V
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14639EJ2V0DS00 (2nd edition) The mark # shows major revised points.
Date Published April 2001 NS CP(K)
Printed in Japan
©
1999, 2000

1 Page





K3405 pdf, ピン配列
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
VGS =10 V
7.0 V
150
4.5 V
100
50
Pulsed
0
012 3
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = 10 V
ID = 1 mA
2.5
2.0
1.5
1.0
0.5
0
50 0 50 100 150
Tch - Channel Temperature - ˚C
www.DataSheet4U.cDoRmAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
15 ID = 48 A
24 A
10 A
10
5
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
2SK3405
FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
VDS = 10 V
100
10
Tch = 50˚C
25˚C
25˚C
1 75˚C
150˚C
0.1
1
2 3 45
VGS - Gate to Source Voltage - V
6
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS = 10 V
Pulsed
10
Tch = 150˚C
75˚C
25˚C
1 25˚C
50˚C
0.1
0.01
0.1 1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
20
10 VGS = 10 V
7.0 V
4.5 V
0
0.1 1
10 100 1000
ID - Drain Current - A
Data Sheet D14639EJ2V0DS
3


3Pages


K3405 電子部品, 半導体
PACKAGE DRAWINGS (Unit: mm)
1)TO-220AB (MP-25)
10.6 MAX.
10.0
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
2SK3405
2)TO-263 (MP-25ZK)
No plating
10.0±0.2
0.4
8.4 TYP.
4
4.45±0.2
1.3±0.2
0.025 to
0.25
0.7±0.15
2.54
123
0.5±0.2
0 to 8 o
0.25
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3)TO-263 (MP-25ZJ)
(10)
4
4.8 MAX.
1.3±0.2
1.4±0.2
www.DataSheet4U0..7c±o0m.2
(0.5R()0.8R)
2.54 TYP. 1 2 3 2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6 Data Sheet D14639EJ2V0DS

6 Page

合計 : 8 ページ
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