DataSheet.jp

TC2591 の電気的特性と機能

TC2591のメーカーはTranscomです、この部品の機能は「1 W Flange Ceramic Packaged PHEMT GaAs Power FETs」です。


製品の詳細 ( Datasheet PDF )

部品番号
TC2591
部品説明
1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
メーカ
Transcom
ロゴ

Transcom ロゴ 




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TC2591 Datasheet, TC2591 PDF,ピン配置, 機能
TC2591
REV4_20070507
1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
FEATURES
1 W Typical Output Power at 6 GHz
12 dB Typical Linear Power Gain at 6 GHz
High Linearity: IP3 = 40 dBm Typical at 6 GHz
High Power Added Efficiency:
Nominal PAE of 43 % at 6 GHz
Suitable for High Reliability Application
Breakdown Voltage: BVDGO 15 V
Lg = 0.35 µm, Wg = 2.4 mm
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.
The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC
and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers
for commercial and military high performance power applications.
www.EDaLtaESCheTet4RUI.cComAL SPECIFICATIONS (TA=25 °C)
Symbol
CONDITIONS
MIN TYP MAX UNIT
P1dB Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS = 240 mA
29.5 30
GL Linear Power Gain, f = 6GHz VDS = 8 V, IDS = 240 mA
11
IP3 Intercept Point of the 3rd-order Intermodulation, f = 6GHz VDS = 8 V, IDS = 240 mA, *PSCL = 17 dBm
12
40
PAE Power Added Efficiency at 1dB Compression Power, f = 6GHz
43
dBm
dB
dBm
%
IDSS
gm
VP
BVDGO
Rth
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA
Drain-Gate Breakdown Voltage at IDGO =1.2 mA
Thermal Resistance
600
400
-1.7**
15 18
18
mA
mS
Volts
Volts
°C/W
Note: * PSCL: Output Power of Single Carrier Level.
** For the tight control of the pinch-off voltage range, we divide TC2591 into 3 model numbers to fit customer design requirement
(1)TC2591P1519 : Vp = -1.5V to -1.9V (2)TC2591P1620 : Vp = -1.6V to -2.0V (3)TC2591P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3

1 Page





TC2591 pdf, ピン配列
NONLINEAR MODEL
Cgd
G Lpkg3 Lpkg2 Lpkg1 Lg Rg
Cpkg2
Cpkg1
Ri
Cgs
FET
Cds
Rs
Ls
Lpkg4
S
TOM2 MODEL PARAMETERS
TC2591
REV4_20070507
Rd Ld Lpkg1 Lpkg2 Lpkg3 D
Rds Cpkg1
Crf
Cpkg2
VTO
-2 V
ALPHA
4.54
BETA
0.399
GAMMA
0.0084
DELTA
0.003
www.DataSheet4U.com
Q 1.055
NG 0
ND 0.01
TAU
3.9 ps
RG 0.65 Ohm
RD 0.675 Ohm
RS 0.475 Ohm
IS 1E-14 mA
N1
VBI 0.68 V
VDELTA
0.2 V
VMAX
0.5 V
CGD
CGS
CDS
VBR
TNOM
LS
LG
LD
Rds
Ri
Crf
Lpkg1
Lpkg2
Lpkg3
Lpkg4
Cpkg1
Cpkg2
0.22 pF
4.04 pF
0.62 pF
15 V
27 °C
0.009 nH
0.0475 nH
0.032 nH
10.29 Ohm
0.0375 Ohm
1E-7 PF
0.1 nH
0.16 nH
0.07 nH
0.032 nH
0.42 PF
0.26 PF
MODEL RANGE
Frequency: 0.5 to 10 GHz
Bias: VDS = 1V to 8V, ID = 100mA to 600mA
IDS = 600mA at VGS = 0V, VDS = 2V
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P3/3


3Pages



合計 : 3 ページ
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[ TC2591 データシート.PDF ]

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部品番号部品説明メーカ
TC2591

1 W Flange Ceramic Packaged PHEMT GaAs Power FETs

Transcom
Transcom

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