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NP80N03NDE の電気的特性と機能

NP80N03NDEのメーカーはNECです、この部品の機能は「MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号
NP80N03NDE
部品説明
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
メーカ
NEC
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NEC ロゴ 




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NP80N03NDE Datasheet, NP80N03NDE PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03EDE, NP80N03KDE
NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP80N03EDE-E1-AY Note1, 2
NP80N03EDE-E2-AY Note1, 2
NP80N03KDE-E1-AY Note1
NP80N03KDE-E2-AY Note1
NP80N03CDE-S12-AZ Note1, 2
NP80N03DDE-S12-AY Note1, 2
NP80N03MDE-S18-AY Note1
NP80N03NDE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
Channel Temperature 175 degree rated
Super Low on-state Resistance
www.DataSheet4U.com
RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A)
Low input capacitance
Ciss = 2600 pF TYP.
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15310EJ3V0DS00 (3rd edition)
Date Published October 2007 NS
2001, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:"

1 Page





NP80N03NDE pdf, ピン配列
NP80N03EDE, NP80N03KDE, NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 40 A
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 40 A
RDS(on)2
VGS = 5 V, ID = 40 A
RDS(on)3
VGS = 4.5 V, ID = 40 A
Input Capacitance
Ciss VDS = 25 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 40 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 1 Ω
Fall Time
tf
Total Gate Charge
QG1 ID = 80 A, VDD = 24 V, VGS = 10 V
QG2 VDD = 24 V,
Gate to Source Charge
QGS VGS = 5 V,
Gate to Drain Charge
QGD ID = 80 A
Body Diode Forward Voltage
VF(S-D)
IF = 80 A, VGS = 0 V
Reverse Recovery Time
trr IF = 80 A, VGS = 0 V,
Reverse Recovery Charge
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
10 μA
±100 nA
1.5 2.0 2.5
V
20 41
S
5.3 7.0 mΩ
6.8 9.0 mΩ
7.5 11 mΩ
2600 3900 pF
590 890 pF
270 490 pF
20 44 ns
12 31 ns
60 120 ns
14 35 ns
48 72 nC
28 42 nC
10 nC
14 nC
1.0 V
34 ns
22 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
www.DataSheet4U.com
D.U.T.
RG = 25 Ω
L
PG.
VGS = 20 0 V
50 Ω
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet D15310EJ3V0DS
3


3Pages


NP80N03NDE 電子部品, 半導体
NP80N03EDE, NP80N03KDE, NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs
CHANNEL TEMPERATURE
12 Pulsed
10 VGS = 4.5 V
5V
10 V
8
6
4
2
0 ID = 40 A
50 0 50 100 150
Tch - Channel Temperature - °C
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100 VGS = 10 V
10 0 V
1
0.10
0.5 1.0
VF(S-D) - Source to Drain Voltage - V
1.5
10000
1000
100
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.1
www.DataSheet4U.com
1 10
VDS - Drain to Source Voltage - V
100
1000
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1 1
10 100
IF - Diode Forward Current - A
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
td(off)
td(on)
10 tr
VDD = 15 V
VGS = 10 V
1 RG = 1 Ω
0.1
1
10
ID - Drain Current - A
100
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 16
35 14
30
25
VDD = 24 V
15 V
20 6 V
VGS 12
10
8
15 6
10 4
VDS
5
2
ID = 80 A
00
0 10 20 30 40 50 60 70 80
QG - Gate Charge - nC
6 Data Sheet D15310EJ3V0DS

6 Page

合計 : 10 ページ
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部品番号部品説明メーカ
NP80N03NDE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NEC
NEC

www.DataSheet.jp     

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