DataSheet.jp

2N120CND の電気的特性と機能

2N120CNDのメーカーはIntersil Corporationです、この部品の機能は「HGTP2N120CND」です。


製品の詳細 ( Datasheet PDF )

部品番号
2N120CND
部品説明
HGTP2N120CND
メーカ
Intersil Corporation
ロゴ

Intersil Corporation ロゴ 




このページの下部にプレビューと2N120CNDダウンロード(pdfファイル)リンクがあります。


Total 7 pages
scroll

No Preview Available !

2N120CND Datasheet, 2N120CND PDF,ピン配置, 機能
HGTP2N120CND, HGT1S2N120CNDS
Data Sheet
January 2000 File Number 4681.2
13A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
The HGTP2N120CND and HGT1S2N120CNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49313. The Diode used is the development type TA49056
(Part number RHRD4120).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49311.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP2N120CND
TO-220AB
2N120CND
HGT1S2N120CNDS TO-263AB
2N120CND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S2N120CNDS9A.
Symbol
www.DataSheet4U.com
C
G
Features
• 13A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

1 Page





2N120CND pdf, ピン配列
HGTP2N120CND, HGT1S2N120CNDS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
VEC
trr
RθJC
IEC = 2.6A
IEC = 1A, dlEC/dt = 200A/µs
IEC = 2.6A, dlEC/dt = 200A/µs
IGBT
Diode
- 1.8 2.0
V
- 31 35 ns
- 47 52 ns
-
-
1.20
oC/W
- - 2.5 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
14
VGE = 15V
12
10
8
6
4
2
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
16
TJ = 150oC, RG = 51, VGE = 15V, L = 5mH
14
12
10
8
6
4
2
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
200
www.DataSheet4UT.Jco=m150oC, RG = 51, VGE = 15V, L = 5mH
100
TC VGE
75oC 15V
75oC 12V
50
50
VCE = 840V, RG = 51, TJ = 125oC
40
30
50
40
30
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
10
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.2oC/W, SEE NOTES
TC
110oC
110oC
VGE
15V
12V
1 2 34
ICE, COLLECTOR TO EMITTER CURRENT (A)
5
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
20
ISC
10
20
tSC
10
0
10
11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
0
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3


3Pages


2N120CND 電子部品, 半導体
HGTP2N120CND, HGT1S2N120CNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
100
0.5
0.2
0.1
10-1 0.05
0.02
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
10-210-5
SINGLE PULSE
10-4
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
10-1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
100
20 70
TC = 25oC, dlEC / dt = 200A/µs
10 60
150oC
1
-55oC
25oC
0.1
0.5
1.0 1.5 2.0
VF, FORWARD VOLTAGE (V)
2.5
www.DaFtIaGSUhReEet41U8..cDomIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
50
trr
40
30
ta
20
tb
10
012345
IF, FORWARD CURRENT (A)
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveforms
RHRD4120
RG = 51
L = 5mH
+
- VDD = 960V
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
VCE
ICE
90%
EOFF
10%
EON
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 21. SWITCHING TEST WAVEFORMS
6

6 Page

合計 : 7 ページ
PDF ダウンロード

[ 2N120CND データシート.PDF ]

データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。

scroll


部品番号部品説明メーカ
2N120CND

HGTP2N120CND

Intersil Corporation
Intersil Corporation

www.DataSheet.jp     

|     2020   |  メール    |

    最新        |     Sitemap