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FSB50450US の電気的特性と機能

FSB50450USのメーカーはFairchild Semiconductorです、この部品の機能は「Smart Power Module」です。


製品の詳細 ( Datasheet PDF )

部品番号
FSB50450US
部品説明
Smart Power Module
メーカ
Fairchild Semiconductor
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Fairchild Semiconductor ロゴ 




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FSB50450US Datasheet, FSB50450US PDF,ピン配置, 機能
February 2009
FSB50450US
Smart Power Module (SPM®)
Features
• 500V RDS(on)=2.4Ω(max) 3-phase FRFET inverter including
high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Surface mounted device package
• Moisture Sensitive Level (MSL) 3
General Description
FSB50450US is a tiny smart power module (SPM®) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50450US
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50450US is the most
solution for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
www.DataAShbeseto4Ul.ucotme Maximum Ratings
Symbol
Parameter
VPN
DC Link Input Voltage,
Drain-source Voltage of each FRFET
ID25 Each FRFET Drain Current, Continuous
ID80 Each FRFET Drain Current, Continuous
IDP Each FRFET Drain Current, Peak
PD Maximum Power Dissipation
VCC Control Supply Voltage
VBS High-side Bias Voltage
VIN Input Signal Voltage
TJ Operating Junction Temperature
TSTG Storage Temperature
RθJC Junction to Case Thermal Resistance
VISO Isolation Voltage
Conditions
Rating
500
TC = 25°C
TC = 80°C
TC = 25°C, PW < 100μs
TC = 25°C, Each FRFET
Applied between VCC and COM
Applied between VB(U)-U, VB(V)-V, VB(W)-W
Applied between IN and COM
1.5
1.1
3.8
14
20
20
-0.3 ~ VCC+0.3
-40 ~ 150
Each FRFET under inverter operating con-
dition (Note 1)
-50 ~ 150
8.9
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
1500
Units
V
A
A
A
W
V
V
V
°C
°C
°C/W
Vrms
©2009 Fairchild Semiconductor Corporation
FSB50450US Rev. A
1
www.fairchildsemi.com

1 Page





FSB50450US pdf, ピン配列
Electrical Characteristics (TJ = 25°C, VCC=VBS=15V Unless Otherwise Specified)
Inverter Part (Each FRFET Unless Otherwise Specified)
Symbol
Parameter
Conditions
Min Typ Max Units
BVDSS
Drain-Source
Voltage
Breakdown
VIN= 0V, ID = 250μA (Note 2)
500 -
-
V
ΔBVDSS/
ΔTJ
IDSS
Breakdown Voltage
perature Coefficient
Tem-
ID = 250μA, Referenced to 25°C
Zero Gate Voltage
Drain Current
VIN= 0V, VDS = 500V
- 0.53 -
- - 250
V
μA
RDS(on)
Static Drain-Source
On-Resistance
VCC = VBS = 15V, VIN = 5V, ID = 1.0A
- 1.9 2.4
Ω
VSD
Drain-Source Diode
Forward Voltage
VCC = VBS = 15V, VIN = 0V, ID = -1.0A
- - 1.2 V
tON
tOFF
trr
EON
EOFF
RBSOA
Switching Times
VPN = 300V, VCC = VBS = 15V, ID = 1.0A
VIN = 0V 5V
Inductive load L=3mH
High- and low-side FRFET switching
(Note 3)
Reverse-bias
ating Area
Safe
Oper-
VPN = 400V, VCC = VBS = 15V, ID = IDP, VDS=BVDSS,
TJ = 150°C
High- and low-side FRFET switching (Note 4)
-
-
-
-
-
1250
500
200
80
10
-
-
-
-
-
Full Square
ns
ns
ns
μJ
μJ
Control Part (Each HVIC Unless Otherwise Specified)
Symbol
Parameter
Conditions
IQCC Quiescent VCC Current
IQBS Quiescent VBS Current
UVCCD
UVCCR
Low-side Undervoltage
Protection (Figure 6)
UVBSD High-side Undervoltage
UVBSR Protection (Figure 7)
www.DataSheeVtI4HU.comON Threshold Voltage
VIL OFF Threshold Voltage
IIH Input Bias Current
IIL
VCC=15V, VIN=0V Applied between VCC and COM
VBS=15V, VIN=0V
Applied between VB(U)-U,
VB(V)-V, VB(W)-W
VCC Undervoltage Protection Detection Level
VCC Undervoltage Protection Reset Level
VBS Undervoltage Protection Detection Level
VBS Undervoltage Protection Reset Level
Logic High Level
Applied between IN and COM
Logic Low Level
VIN = 5V
VIN = 0V
Applied between IN and COM
Min Typ Max Units
- - 160 μA
- - 100 μA
7.4 8.0 9.4
8.0 8.9 9.8
7.4 8.0 9.4
8.0 8.9 9.8
3.0 -
-
- - 0.8
- 10 20
- -2
V
V
V
V
V
V
μA
μA
Note:
1. For the measurement point of case temperature TC, please refer to Figure 3 in page 4.
2. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM®. VPN should be sufficiently less than this value considering the
effect of the stray inductance so that VDS should not exceed BVDSS in any case.
3. tON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.
4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir-
cuit that is same as the switching test circuit.
Package Marking & Ordering Information
Device Marking
FSB50450US
Device
FSB50450US
Package
SPM23-BD
Reel Size
330mm
Packing Type
Tape & reel
Quantity
450
FSB50450US Rev. A
3
www.fairchildsemi.com


3Pages


FSB50450US 電子部品, 半導体
R2
R1
R5
C5
R1
C2
C2
R1
C2
15-V
Supply
(1) COM
(2) VB(U)
(3) VCC(U)
(4) IN(UH)
(5) IN(UL)
VCC
HIN
LIN
VB
HO
VS
C1 (6) VS(U)
COM LO
(7) VB(V)
(8) VCC(V)
(9) IN(VH)
(10) IN(VL)
VCC
HIN
LIN
VB
HO
VS
C1 (11) VS(V)
COM LO
(12) VB(W)
(13) VCC(W)
(14) IN(WH)
(15) IN(WL)
VCC
HIN
LIN
VB
HO
VS
C1 (16) VS(W) COM LO
For 3-phase current sensing and protection
C4
(17) P
(18) U
(19) NU
(20) NV
(21) V
(22) NW
(23) W
R4
R3
C3 VDC
M
Figure 8. Example of Application Circuit
www.DataSheet4U.com
FSB50450US Rev. A
6
www.fairchildsemi.com

6 Page

合計 : 8 ページ
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部品番号部品説明メーカ
FSB50450US

Smart Power Module

Fairchild Semiconductor
Fairchild Semiconductor

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