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UGF8BT の電気的特性と機能

UGF8BTのメーカーはVishay Siliconixです、この部品の機能は「Ultrafast Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号
UGF8BT
部品説明
Ultrafast Rectifier ( Diode )
メーカ
Vishay Siliconix
ロゴ

Vishay Siliconix ロゴ 




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UGF8BT Datasheet, UGF8BT PDF,ピン配置, 機能
UG(F,B)8AT thru UG(F,B)8DT
Vishay General Semiconductor
Ultrafast Rectifier
TO-220AC
ITO-220AC
UG8xT
PIN 1
PIN 2
2
1
CASE
TO-263AB
K
UGF8xT
PIN 1
PIN 2
2
1
UGB8xT
PIN 1
1
2
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
www.DataSheet4U.com trr
VF
TJ max.
8.0 A
50 V to 200 V
150 A
20 ns
0.95 V
150 °C
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL UG8AT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 100 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
50
35
50
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminals to heatsink t = 1 min
TJ, TSTG
VAC
UG8BT UG8CT
100 150
70 105
100 150
8.0
150
- 55 to + 150
1500
UG8DT
200
140
200
UNIT
V
V
V
A
A
°C
V
Document Number: 88765 For technical questions within your region, please contact one of the following:
Revision: 09-Nov-07
www.vishay.com
1

1 Page





UGF8BT pdf, ピン配列
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
0
0 25 50 75 100 125 150 175
Ambient Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
1000
TC = 100 °C
8.3 ms Single Half Sine-Wave
100
10
www.DataSheet4U1.com
10
Number of Cycles at 60 Hz
100
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
100
10
TJ = 25 °C
1 Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
1.6
Figure 3. Typical Instantaneous Forward Charateristics
UG(F,B)8AT thru UG(F,B)8DT
Vishay General Semiconductor
1000
100
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
0.01
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Charateristics
60
IF = 4.0 A
VR = 30 V
50
dI/dt = 150 A/µs
40
30
dI/dt = 100 A/µs
20 A/µs
50 A/µs
100 A/µs
50 A/µs
20
10
0
0
150 A/µs
20 A/µs
trr
Qrr
25 50 75 100 125 150 175
Junction Temperature (°C)
Figure 5. Reverse Switching Characteristics
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1 1 10 100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance
Document Number: 88765 For technical questions within your region, please contact one of the following:
Revision: 09-Nov-07
www.vishay.com
3


3Pages



合計 : 5 ページ
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[ UGF8BT データシート.PDF ]

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部品番号部品説明メーカ
UGF8BT

ULTRAFAST EFFICIENT PLASTIC RECTIFIER

General Semiconductor
General Semiconductor
UGF8BT

Ultrafast Rectifier ( Diode )

Vishay Siliconix
Vishay Siliconix

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