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PDF STW72N60DM2AG Data sheet ( Hoja de datos )
| Número de pieza | STW72N60DM2AG | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STW72N60DM2AG
Automotive N-channel 600 V, 0.037 Ω typ., 68 A MDmesh™
DM2 Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
STW72N60DM2AG
VDS
600 V
RDS(on)
max.
0.042 Ω
ID
68 A
PTOT
446 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW72N60DM2AG
Table 1: Device summary
Marking
72N60DM2
Package
TO-247
Packing
Tube
December 2015
DocID027314 Rev 4
This is information on a product in full production.
1/12
www.st.com
1 page  
STW72N60DM2AG
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
IRRM Reverse recovery current
VGS = 0 V, ISD = 66 A
ISD = 66 A, di/dt = 100 A/µs,
VDD = 480 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
- 66 A
- 264 A
- 1.6 V
- 136
ns
- 0.65
µC
- 9.6
A
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 66 A, di/dt = 100 A/µs,
VDD = 480 V, Tj = 150 °C
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
- 224
- 2.28
- 20.4
ns
???C
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027314 Rev 4
5/12
5 Page 
STW72N60DM2AG
Revision history
5 Revision history
Date
27-Jan-2015
14-Apr-2015
01-Jul-2015
09-Dec-2015
Revision
1
2
3
4
Table 10: Document revision history
Changes
First release.
Text edits and formatting changes throughout document
Removed TO-247 long leads package data
Added Section 2.1 Electrical characteristics (curves)
Text edits and formatting changes throughout document
On cover page:
- updated title and features
In Section Electrical ratings:
- updated Table Absolute maximum ratings
In Section Electrical characteristics:
- updated Tables Static, Dynamic, Switching times and Source-drain
diode
Updated Section Electrical characteristics (curves)
Updated Table 4: "Avalanche characteristics".
DocID027314 Rev 4
11/12
11 Page | ||
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