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V23990-K243-A-PMのメーカーはVincotechです、この部品の機能は「Power Integrated Module」です。 |
部品番号 | V23990-K243-A-PM |
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部品説明 | Power Integrated Module | ||
メーカ | Vincotech | ||
ロゴ | |||
このページの下部にプレビューとV23990-K243-A-PMダウンロード(pdfファイル)リンクがあります。 Total 17 pages
MiniSKiiP® 3 PIM
Features
● IGBT3 technology for low saturation losses
● Solderless spring contact mounting system
Target Applications
● Industrial motor drives
Types
● V23990-K243-A-PM
V23990-K243-A-PM
600V/100A
MiniSkiip® 3 housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
VRRM
IFAV
IFSM
I2t
Ptot
Tjmax
Tj=Tjmax
tp=10ms
Tj=Tjmax
Th=80°C
Tc=80°C
Tj=25°C
Th=80°C
Tc=80°C
VCE
IC
ICpulse
Ptot
VGE
tSC
VCC
Tjmax
Tj=Tjmax
tp limited by Tjmax
VCE ≤ 1200V, Tj ≤ Top max
Tj=Tjmax
Tj≤150°C
VGE=15V
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Value
Unit
1600
69
93
700
2450
77
117
150
V
A
A
A2s
W
°C
600 V
85
A
85
300
A
300 A
154
W
224
±20 V
6 µs
360 V
175 °C
Copyright by Vincotech
1
Revision: 3.1
1 Page V23990-K243-A-PM
Parameter
D8,D9,D10,D11,D12,D13
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R100
R100
Power dissipation constant
A-value
B-value
Vincotech NTC Reference
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Min Typ Max
Unit
VF
Vto
rt
Ir
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
1500
35
35
35
Tj=25°C
0,8 1,02 1,35
Tj=125°C
0,94
V
Tj=25°C
Tj=125°C
0,88
0,75
V
Tj=25°C
Tj=125°C
4
6
mΩ
Tj=25°C
Tj=125°C
0,1
2
mA
0,90 K/W
VGE(th) VCE=VGE
VCE(sat)
ICES
IGES
0,008
Tj=25°C
Tj=150°C
5
5,8 6,5
V
15
100
Tj=25°C
1,05 1,58 1,85
Tj=150°C
1,78
V
0 600
Tj=25°C
Tj=150°C
0,0052
mA
±25 0
Tj=25°C
Tj=150°C
1200
nA
Rgint
none
Ω
td(on)
Tj=25°C
Tj=150°C
tr
Tj=25°C
Tj=150°C
td(off)
tf
Rgoff=8 Ω
Rgon=8 Ω
±15
300
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Eon
Tj=25°C
Tj=150°C
Eoff
Tj=25°C
Tj=150°C
187,2
187,2
31,5
32,8
222,5
241,8
53,3
86,9
2,29
2,92
2,43
3,08
ns
mWs
Cies 6280
Coss f=1MHz
0
25
Tj=25°C
400 pF
Crss 186
QGate
±15 480 100 Tj=25°C 620 nC
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
0,6 K/W
VF
IRRM
trr
Qrr Rgoff=8 Ω
di(rec)max
/dt
Erec
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
100
Tj=25°C
1 1,38 1,9
Tj=150°C
1,4
V
Tj=25°C
Tj=150°C
92,8
112,9
A
Tj=25°C
Tj=150°C
167,5
247,7
ns
300
100
Tj=25°C
Tj=150°C
5,85
10,5
µC
Tj=25°C
Tj=150°C
3184
2578
A/µs
Tj=25°C
Tj=150°C
1,1
2,15
mWs
0,8 K/W
R
∆R/R R100=1670 Ω
P
B(25/50) Tol. %
B(25/100) Tol. %
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
-3
1670,313
3
7,635*10-3
1,731*10-5
E
Ω
%
Ω
mW/K
1/K
1/K²
Copyright by Vincotech
3
Revision: 3.1
3Pages V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
Typical switching times as a
function of collector current
t = f(IC)
1
tdoff
0,1 tf
tr
0,01
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(RG)
1
tdon
0,1
0,01
T1,T2,T3,T4,T5,T6,T7 IGBT
tdoff
tdon
tr
tf
0,001
0
50
With an inductive load at
Tj =
VCE =
VGE =
Rgon =
Rgoff =
125
300
±15
8
8
°C
V
V
Ω
Ω
100
150
I C (A)
200
0,001
0
8 16 24 32 R G ( Ω ) 40
With an inductive load at
Tj =
VCE =
VGE =
IC =
125
300
±15
100
°C
V
V
A
Figure 11
Typical reverse recovery time as a
function of collector current
trr = f(IC)
0,5
D1,D2,D3,D4,D5,D6,D7 FWD
0,4
trr
Tj = Tjmax -25°C
0,3
trr
0,2
0,1
0,0
0
At
Tj =
VCE =
VGE =
Rgon =
Tj = 25°C
50 100
25/125
300
±15
8
°C
V
V
Ω
150
I C (A)
200
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon)
0,5
D1,D2,D3,D4,D5,D6,D7 FWD
trr
0,4
Tj = Tjmax -25°C
0,3
trr
0,2
Tj = 25°C
0,1
0,0
0
8 16 24 32 R g on ( Ω ) 40
At
Tj =
VR =
IF =
VGE =
25/125
300
100
±15
°C
V
A
V
Copyright by Vincotech
6
Revision: 3.1
6 Page | |||
ページ | 合計 : 17 ページ | ||
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部品番号 | 部品説明 | メーカ |
V23990-K243-A-PM | Power Integrated Module | Vincotech |