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PDF V23990-P763-A-PM Data sheet ( Hoja de datos )
| Número de pieza | V23990-P763-A-PM | |
| Descripción | Power Integrated Module | |
| Fabricantes | Vincotech | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de V23990-P763-A-PM (archivo pdf) en la parte inferior de esta página. Total 24 Páginas | ||
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flow PIM 2 3rd
Features
● 3~rectifier,BRC,Inverter, NTC
● Very Compact housing, easy to route
● IGBT3/ EmCon3 technology for low saturation
losses and improved EMC behavior
Target Applications
● Motor Drives
● Power Generation
Types
● V23990-P763-A-PM
V23990-P763-A-PM
datasheet
600 V / 50 A
flow 2 housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Input Rectifier Diode
Repetitive peak reverse voltage
Forward current
Surge forward current
I2t-value
Power dissipation
Maximum Junction Temperature
Inverter IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
VRRM
IFAV
IFSM
I2t
Ptot
Tjmax
DC current
tp=10ms
Tj=Tjmax
Th=80°C
Tc=80°C
Tj=25°C
Th=80°C
Tc=80°C
VCE
IC
ICpulse
Ptot
VGE
tSC
VCC
Tjmax
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Tj≤150°C
VGE=15V
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Value
Unit
1600
80
80
700
2450
95
144
150
V
A
A
A2s
W
°C
600
60
75
100
115
175
±20
6
360
175
V
A
A
W
V
µs
V
°C
copyright Vincotech
1 23 Dec 2014 / Revision: 4
1 page  
Parameter
Brake IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Thermal resistance chip to case
Brake Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink
Thermal resistance chip to case
Brake FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink
Thermal resistance chip to case
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
V23990-P763-A-PM
datasheet
Characteristic Values
Symbol
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Unit
Min
Typ
Max
VGE(th)
VCE=VGE
VCE(sat)
15
ICES 0
IGES 20
Rgint
td(on)
tr
td(off)
tf
Rgoff=16 Ω
Rgon=16 Ω
±15
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
±15
RthJH Thermal grease
thickness≤50µm
RthJC λ = 0,61 W/m·K
600
0
300
25
480
0,00043
Tj=25°C
Tj=150°C
5
5,8 6,5
V
30 Tj=25°C
Tj=150°C
1,5
1,77
2
V
Tj=25°C
Tj=150°C
0,14
mA
Tj=25°C
Tj=150°C
400 nA
none
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
30 Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
96
98
14
18
141
170
103
121
0,38
0,51
0,71
0,98
ns
mWs
1630
Tj=25°C 108 pF
50
30 Tj=25°C 167 nC
1,13
0,74
K/W
VF
RthJH
RthJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
10
Tj=25°C
1,2 1,85 2,1
V
Tj=150°C
1,88
1,77
K/W
1,17
K/W
VF
Ir ±15
IRRM
trr
Qrr Rgon=16 Ω
di(rec)max
/dt
Erec
±15
RthJH Thermal grease
thickness≤50µm
RthJC λ = 0,61 W/m·K
300
300
20
30
30
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,66
1,6
2,1
140
V
µA
30
33
22
146
0,47
1,81
4805
2381
0,21
0,42
A
ns
µC
A/µs
mWs
1,82
1,20
K/W
R25 Tol. ±5%
DR/R R100=1486.1Ω
P
B(25/100) Tol. ±3%
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
210
4000
23,1
kΩ
%/K
mW
K
copyright Vincotech
5 23 Dec 2014 / Revision: 4
5 Page 
Output Inverter
V23990-P763-A-PM
datasheet
Figure 21
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
250
Output inverter IGBT
Figure 22
Collector current as a
function of heatsink temperature
IC = f(Th)
80
Output inverter IGBT
200
60
150
40
100
20
50
0
0
At
Tj =
175
50
°C
0
100
150
Th ( o C)
200
0
50 100
single heating
overall heating
At
Tj =
VGE =
175
15
°C
V
150 Th ( o C)
200
Figure 23
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
160
Output inverter FWD
Figure 24
Forward current as a
function of heatsink temperature
IF = f(Th)
80
Output inverter FWD
120 60
80 40
40 20
0
0
At
Tj =
50
175 °C
100
150
Th ( o C)
200
0
0
At
Tj =
50
175 °C
100
150 Th ( o C) 200
copyright Vincotech
11 23 Dec 2014 / Revision: 4
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet V23990-P763-A-PM.PDF ] | |
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