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VS-MBRB1645PbF の電気的特性と機能

VS-MBRB1645PbFのメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-MBRB1645PbF
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-MBRB1645PbF Datasheet, VS-MBRB1645PbF PDF,ピン配置, 機能
VS-MBRB1635PbF, VS-MBRB1645PbF
Vishay Semiconductors
Schottky Rectifier, 16 A
Base
cathode
2
D2PAK
1
N/C
3
Anode
PRODUCT SUMMARY
IF(AV)
VR
IRM
16 A
35 V/45 V
40 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 16 Apk, TJ = 125 °C
TJ
FEATURES
• 150 °C TJ operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
This VS-MBRB16... Schottky rectifier has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
VALUES
16
35/45
1800
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-MBRB1635PbF VS-MBRB1645PbF
35 45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Non-repetitive peak surge current
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
TC = 134 °C, rated VR
Following any rated
5 μs sine or 3 μs rect. pulse load condition and with
rated VRRM applied
Surge applied at rated load condition halfwave
single phase 60 Hz
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
16
1800
150
24
3.6
UNITS
A
mJ
A
Document Number: 94304 For technical questions within your region, please contact one of the following:
Revision: 23-Jun-10
www.vishay.com
1

1 Page





VS-MBRB1645PbF pdf, ピン配列
VS-MBRB1635PbF, VS-MBRB1645PbF
Schottky Rectifier, 16 A
Vishay Semiconductors
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 000
100
10
1.0
0.1
0.01
0.001
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.0001
0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
0 10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.001
0.00001
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
Document Number: 94304 For technical questions within your region, please contact one of the following:
Revision: 23-Jun-10
www.vishay.com
3


3Pages


VS-MBRB1645PbF 電子部品, 半導体
D2PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
(3) L1
(2)(3)
E
4
A
D
1 23
L2
BB
H
(2)
Detail A
2x e
2 x b2 C
2xb
0.010 M A M B
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
A
c2
B
A
(E)
A
c
± 0.004 M B
Gauge
plane
0° to 8°
E1
View A - A
H
L3
L
A1
L4
Detail “A”
Rotated 90 °CW
Scale: 8:1
Pad layout
11.00
(0.43)
MIN.
(D1) (3)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
MIN.
(3) 2.64 (0.103)
2.41 (0.096)
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
Plating
(4)
b1, b3
Base
Metal
B
Seating
plane
(c) c1 (4)
(b, b2)
Section B - B and C - C
Scale: None
SYMBOL
A
A1
b
b1
b2
b3
c
c1
c2
D
MILLIMETERS
MIN. MAX.
4.06 4.83
0.00 0.254
0.51 0.99
0.51 0.89
1.14 1.78
1.14 1.73
0.38 0.74
0.38 0.58
1.14 1.65
8.51 9.65
INCHES
MIN. MAX.
0.160 0.190
0.000 0.010
0.020 0.039
0.020 0.035
0.045 0.070
0.045 0.068
0.015 0.029
0.015 0.023
0.045 0.065
0.335 0.380
NOTES
4
4
4
2
SYMBOL
D1
E
E1
e
H
L
L1
L2
L3
L4
MILLIMETERS
MIN. MAX.
6.86 8.00
9.65 10.67
7.90 8.80
2.54 BSC
14.61 15.88
1.78 2.79
- 1.65
1.27 1.78
0.25 BSC
4.78 5.28
INCHES
MIN. MAX.
0.270 0.315
0.380 0.420
0.311 0.346
0.100 BSC
0.575 0.625
0.070 0.110
- 0.066
0.050 0.070
0.010 BSC
0.188 0.208
NOTES
3
2, 3
3
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
Document Number: 95046 For technical questions within your region, please contact one of the following:
Revision: 31-Mar-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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部品番号部品説明メーカ
VS-MBRB1645PbF

Schottky Rectifier ( Diode )

Vishay
Vishay


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