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VS-18TQ040-N3 の電気的特性と機能

VS-18TQ040-N3のメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-18TQ040-N3
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-18TQ040-N3 Datasheet, VS-18TQ040-N3 PDF,ピン配置, 機能
VS-18TQ0..PbF Series, VS-18TQ0..-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 18 A
Base
cathode
2
TO-220AC
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
13
Cathode Anode
TO-220AC
18 A
35 V, 40 V, 45 V
0.53 V
25 mA at 125 °C
175 °C
Single die
24 mJ
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Designed and qualified according to JEDEC-JESD47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-18TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
Range
tp = 5 μs sine
18 Apk, TJ = 125 °C
Range
VALUES
18
35 to 45
1800
0.53
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse
voltage
VR
VRWM
VS-18TQ035PbF
VS-18TQ035-N3
35
VS-18TQ040PbF
VS-18TQ040-N3
40
VS-18TQ045PbF
VS-18TQ045-N3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 149 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
18
1800
390
24
3.6
UNITS
A
mJ
A
Revision: 11-Oct-12
1 Document Number: 94149
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-18TQ040-N3 pdf, ピン配列
VS-18TQ0..PbF Series, VS-18TQ0..-N3 Series
www.vishay.com
Vishay Semiconductors
1000
100
10
1
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 000
1000
100
10
1
0.1
0.01
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
0
10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
0
10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.001
0.00001
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
.
100
Revision: 11-Oct-12
3 Document Number: 94149
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-18TQ040-N3 電子部品, 半導体
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
(6)
E
E2 (7)
Q
(6) D
L3
D1
1 23
L4
A
ØP
0.014 M B A M
Detail B
(6) H1
(7)
A
C
L
B
Seating
plane
A
A1
e1
0.015 M B A M
cA
A2
E
H1
θ
Thermal pad
1 23
DD
CC
L1
D2 (6)
2 x b2
2xb
Detail B
E1 (6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Lead tip
View A - A
Conforms to JEDEC outline TO-220AC
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.25 4.65 0.167 0.183
E1
6.86 8.89 0.270 0.350
6
A1 1.14 1.40 0.045 0.055
E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115
e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040
e1 4.88 5.28 0.192 0.208
b1
0.38 0.97 0.015 0.038
4
H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068
L 13.52 14.02 0.532 0.552
b3
1.14 1.73 0.045 0.068
4
L1
3.32 3.82 0.131 0.150
2
c 0.36 0.61 0.014 0.024
L3 1.78 2.13 0.070 0.084
c1
0.36 0.56 0.014 0.022
4
L4
0.76 1.27 0.030 0.050
2
D
14.85 15.25 0.585 0.600
3
Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355
Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6
90° to 93° 90° to 93°
E
10.11 10.51 0.398 0.414
3, 6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 For technical questions within your region, please contact one of the following:
Revision: 07-Mar-11
www.vishay.com
1

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部品番号部品説明メーカ
VS-18TQ040-N3

Schottky Rectifier ( Diode )

Vishay
Vishay


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