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V40100G-E3 の電気的特性と機能

V40100G-E3のメーカーはVishayです、この部品の機能は「Dual High Voltage Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 V40100G-E3
部品説明 Dual High Voltage Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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V40100G-E3 Datasheet, V40100G-E3 PDF,ピン配置, 機能
V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.42 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V40100G
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VF40100G
123
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
K
TO-262AA
K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VB40100G
PIN 1
K
PIN 2
HEATSINK
VI40100G
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
2 x 20 A
100 V
200 A
0.67 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode
MECHANICALDATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V40100G
Maximum repetitive peak reverse voltage
Maximum average forward rectified currentper device
(fig. 1)
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at TJ = 25 °C, L = 90 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VRRM
IF(AV)
IFSM
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF40100G VB40100G
100
40
20
200
VI40100G
230
1.0
10 000
1500
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 09-Sep-13
1 Document Number: 88970
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





V40100G-E3 pdf, ピン配列
V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3
www.vishay.com
Vishay General Semiconductor
100
TA = 150 °C
10 TA = 125 °C
TA = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8
Instantaneous Forward Voltage (V)
1
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
Junction to Case
1
0.1
0.01
V(B,I)40100G
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
10
Junction to Case
1
0.01
VF40100G
0.1 1
10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance
1000
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
Revision: 09-Sep-13
3 Document Number: 88970
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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部品番号部品説明メーカ
V40100G-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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