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VS-6TQ045SPbF の電気的特性と機能

VS-6TQ045SPbFのメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-6TQ045SPbF
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-6TQ045SPbF Datasheet, VS-6TQ045SPbF PDF,ピン配置, 機能
VS-6TQ035SPbF, VS-6TQ040SPbF, VS-6TQ045SPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 6 A
TO-263AB (D2PAK)
Base
cathode
2
1
N/C
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
TO-263AB (D2PAK)
6A
35 V, 40 V, 45 V
0.53 V
7 mA at 125 °C
175 °C
Single die
8 mJ
FEATURES
• 175 °C TJ operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-6TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
Range
tp = 5 μs sine
6 Apk, TJ = 125 °C
Range
VALUES
6
35 to 45
690
0.53
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-6TQ035SPbF VS-6TQ040SPbF VS-6TQ045SPbF UNITS
35 40 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 164 °C, rectangular waveform
6
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
690
140
8
1.20
UNITS
A
mJ
A
Revision: 08-Dec-14
1 Document Number: 94253
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-6TQ045SPbF pdf, ピン配列
VS-6TQ035SPbF, VS-6TQ040SPbF, VS-6TQ045SPbF
www.vishay.com
Vishay Semiconductors
100
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
TJ = 175 °C
10
TJ = 150 °C
1.0 TJ = 125 °C
0.1 TJ = 100 °C
0.01
0.001
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.0001
0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
TJ = 25 °C
100
0 10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1.0
0.1
0.01
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.00001
0.0001
0.001
0.01
0.1
1.0
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
100
Revision: 08-Dec-14
3 Document Number: 94253
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-6TQ045SPbF 電子部品, 半導体
D2PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
(3) L1
(2)(3)
E
4
A
D
1 23
L2
BB
H
(2)
Detail A
2x e
2 x b2 C
2xb
0.010 M A M B
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
A
c2
B
A
(E)
A
c
± 0.004 M B
Gauge
plane
0° to 8°
E1
View A - A
H
L3
L
A1
L4
Detail “A”
Rotated 90 °CW
Scale: 8:1
Pad layout
11.00
(0.43)
MIN.
(D1) (3)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
MIN.
(3) 2.64 (0.103)
2.41 (0.096)
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
Plating
(4)
b1, b3
Base
Metal
B
Seating
plane
(c) c1 (4)
(b, b2)
Section B - B and C - C
Scale: None
SYMBOL
A
A1
b
b1
b2
b3
c
c1
c2
D
MILLIMETERS
MIN. MAX.
4.06 4.83
0.00 0.254
0.51 0.99
0.51 0.89
1.14 1.78
1.14 1.73
0.38 0.74
0.38 0.58
1.14 1.65
8.51 9.65
INCHES
MIN. MAX.
0.160 0.190
0.000 0.010
0.020 0.039
0.020 0.035
0.045 0.070
0.045 0.068
0.015 0.029
0.015 0.023
0.045 0.065
0.335 0.380
NOTES
4
4
4
2
SYMBOL
D1
E
E1
e
H
L
L1
L2
L3
L4
MILLIMETERS
MIN. MAX.
6.86 8.00
9.65 10.67
7.90 8.80
2.54 BSC
14.61 15.88
1.78 2.79
- 1.65
1.27 1.78
0.25 BSC
4.78 5.28
INCHES
MIN. MAX.
0.270 0.315
0.380 0.420
0.311 0.346
0.100 BSC
0.575 0.625
0.070 0.110
- 0.066
0.050 0.070
0.010 BSC
0.188 0.208
NOTES
3
2, 3
3
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
Document Number: 95046 For technical questions within your region, please contact one of the following:
Revision: 31-Mar-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-6TQ045SPbF

Schottky Rectifier ( Diode )

Vishay
Vishay


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