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What is VS-30CPU04-N3?

This electronic component, produced by the manufacturer "Vishay", performs the same function as "Ultrafast Rectifier ( Diode )".


VS-30CPU04-N3 Datasheet PDF - Vishay

Part Number VS-30CPU04-N3
Description Ultrafast Rectifier ( Diode )
Manufacturers Vishay 
Logo Vishay Logo 


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www.vishay.com
VS-30CPU04PbF, VS-30CPU04-N3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt®
TO-247AC
Base
common
cathode
2
13
Anode
1
2
Anode
2
Common
cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to
JEDEC-JESD47
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-247AC
2 x 15 A
400 V
1.25 V
See Recovery table
175 °C
Common cathode
DESCRIPTION/APPLICATION
FRED Pt® series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well
as freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per leg
total device
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFRM
TJ, TStg
TEST CONDITIONS
VALUES
400
15
Rated VR, TC = 149 °C
30
TC = 25 °C
200
Rated VR, TC = 149 °C, square wave, 20 kHz
30
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
400
Forward voltage
IF = 15 A
VF
IF = 15 A, TJ = 150 °C
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 400 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.17
0.93
0.3
30
28
12
MAX.
-
1.25
1.12
10
500
-
-
UNITS
V
μA
pF
nH
Revision: 26-Jun-12
1 Document Number: 94013
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-30CPU04-N3 equivalent
www.vishay.com
VS-30CPU04PbF, VS-30CPU04-N3
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
0.75 IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 26-Jun-12
5 Document Number: 94013
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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