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VS-10TQ045SPbF の電気的特性と機能

VS-10TQ045SPbFのメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-10TQ045SPbF
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-10TQ045SPbF Datasheet, VS-10TQ045SPbF PDF,ピン配置, 機能
www.vishay.com
VS-10TQ035SPbF, VS-10TQ045SPbF
Vishay Semiconductors
High Performance Schottky Rectifier, 10 A
Base
cathode
2
D2PAK
1
N/C
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
D2PAK
10 A
35 V, 40 V, 45 V
0.57 V
15 mA at 125 °C
175 °C
Single die
13 mJ
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10TQ...SPbF Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 10 Apk, TJ = 125 °C
TJ Range
VALUES
10
35/45
1050
0.49
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-10TQ035SPbF
35
VS-10TQ045SPbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 151 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 2 A, L = 6.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
10
1050
280
13
2
UNITS
A
A
mJ
A
Revision: 21-May-14
1 Document Number: 94121
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-10TQ045SPbF pdf, ピン配列
www.vishay.com
VS-10TQ035SPbF, VS-10TQ045SPbF
Vishay Semiconductors
1000
100
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
100 TJ = 175 °C
10 TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1 TJ = 75 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
TJ = 25 °C
100
0
10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.001
0.00001
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
.
100
Revision: 21-May-14
3 Document Number: 94121
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-10TQ045SPbF 電子部品, 半導体
D2PAK, TO-262
Outline Dimensions
Vishay High Power Products
DIMENSIONS FOR D2PAK in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
(3) L1
(2)(3)
E
4
A
D
1 23
L2
BB
H
(2)
Detail A
2x e
2 x b2 C
2xb
0.010 M A M B
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
A
c2
B
A
(E)
A
c
± 0.004 M B
Gauge
plane
0° to 8°
E1
View A - A
H
L3
L
A1
L4
Detail “A”
Rotated 90 °CW
Scale: 8:1
Pad layout
11.00
(0.43)
MIN.
(D1) (3)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
MIN.
(3) 2.64 (0.103)
2.41 (0.096)
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
Plating
(4)
b1, b3
Base
Metal
B
Seating
plane
(c) c1 (4)
(b, b2)
Section B - B and C - C
Scale: None
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
A 4.06 4.83 0.160 0.190
A1 0.00 0.254 0.000 0.010
b 0.51 0.99 0.020 0.039
b1
0.51 0.89 0.020 0.035
4
b2 1.14 1.78 0.045 0.070
b3
1.14 1.73 0.045 0.068
4
c 0.38 0.74 0.015 0.029
c1
0.38 0.58 0.015 0.023
4
c2 1.14 1.65 0.045 0.065
D
8.51 9.65 0.335 0.380
2
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not
exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
SYMBOL
D1
E
E1
e
H
L
L1
L2
L3
L4
MILLIMETERS
MIN. MAX.
6.86 8.00
9.65 10.67
7.90 8.80
2.54 BSC
14.61 15.88
1.78 2.79
- 1.65
1.27 1.78
0.25 BSC
4.78 5.28
INCHES
MIN. MAX.
0.270 0.315
0.380 0.420
0.311 0.346
0.100 BSC
0.575 0.625
0.070 0.110
- 0.066
0.050 0.070
0.010 BSC
0.188 0.208
NOTES
3
2, 3
3
3
(7) Outline conforms to JEDEC outline TO-263AB
Document Number: 95014
Revision: 31-Mar-09
For technical questions concerning discrete products, contact: [email protected]
For technical questions concerning module products, contact: [email protected]
www.vishay.com
1

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部品番号部品説明メーカ
VS-10TQ045SPbF

Schottky Rectifier ( Diode )

Vishay
Vishay


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