DataSheet.jp

VF20120C-E3 の電気的特性と機能

VF20120C-E3のメーカーはVishayです、この部品の機能は「Dual High Voltage Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VF20120C-E3
部品説明 Dual High Voltage Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




このページの下部にプレビューとVF20120C-E3ダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

VF20120C-E3 Datasheet, VF20120C-E3 PDF,ピン配置, 機能
V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20120C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VF20120C
123
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
K
TO-262AA
K
2
1
VB20120C
PIN 1
K
PIN 2
HEATSINK
VI20120C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TJ max.
Package
2 x 10 A
120 V
120 A
0.64 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variation
Common cathode
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
EAS
IRRM
dV/dt
VAC
TJ, TSTG
V20120C
VF20120C VB20120C VI20120C
120
20
10
120
80
0.5
10 000
1500
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 11-Sep-13
1 Document Number: 89040
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VF20120C-E3 pdf, ピン配列
V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3
www.vishay.com
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
Junction to Case
1
0.01
V(B,I)20120C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.1
0.01
VF20120C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance Per Diode
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 11-Sep-13
3 Document Number: 89040
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ VF20120C-E3 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
VF20120C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap