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VS-MBR4060WTPbF の電気的特性と機能

VS-MBR4060WTPbFのメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-MBR4060WTPbF
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-MBR4060WTPbF Datasheet, VS-MBR4060WTPbF PDF,ピン配置, 機能
www.vishay.com
VS-MBR4060WTPbF, VS-MBR4060WT-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
Base
common
cathode
2
TO-247AC
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
13
Anode
1
2
Anode
2
Common
cathode
TO-247AC
2 x 20 A
60 V
0.62 V
100 mA at 125 °C
150 °C
Common cathode
13 mJ
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-MBR4060WT... center tap Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
20 Apk, TJ = 125 °C (per leg)
Range
VALUES
40
60
1020
0.62
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-MBR4060WTPbF
60
VS-MBR4060WT-N3
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
TEST CONDITIONS
TC = 108 °C, 50 % duty cycle, rectangular waveform
VALUES
20
40
Maximum peak one cycle
non-repetitive surge current per leg
5 µs sine or 3 µs rect. pulse
Following any rated
1020
IFSM load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
265
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS TJ = 25 °C, IAS = 1.5 A, L = 11.5 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
13
1.5
UNITS
A
mJ
A
Revision: 30-Aug-11
1 Document Number: 94296
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-MBR4060WTPbF pdf, ピン配列
www.vishay.com
VS-MBR4060WTPbF, VS-MBR4060WT-N3
Vishay Semiconductors
1000
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 25 °C
1
0 0.5 1.0 1.5 2.0 2.5
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
1000
100
10
1
0.1
0.01
TJ = 150 °C
TJ = 100 °C
TJ = 50 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
0.001
0
10 20 30 40 50 60
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
TJ = 25 °C
100
0
10 20 30 40 50 60
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.001
0.00001
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
100
Revision: 30-Aug-11
3 Document Number: 94296
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-MBR4060WTPbF 電子部品, 半導体
www.vishay.com
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
B
(2) R/2
Q
(3)
E
N
S
A
A2
A
A
(6) Ø P
Ø KM DBM
D2
(Datum B)
FP1
2xR
(2)
D
12
3
(5) L1
CL
2 x b2
3xb
0.10 M C A M
2x e
b4
See view B
D
A
C
A1
Thermal pad
D1 (4)
4
(4)
E1
0.01 M D B M
View A - A
Planting
(b1, b3, b5)
Base metal
(c) c1
D DE E
CC
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.65 5.31 0.183 0.209
D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102
E
15.29 15.87 0.602 0.625
3
A2 1.50 2.49 0.059 0.098
E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055
b1 0.99 1.35 0.039 0.053
e
5.46 BSC
0.215 BSC
FK 2.54
0.010
b2 1.65 2.39 0.065 0.094
L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094
L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135
b5 2.59 3.38 0.102 0.133
c 0.38 0.86 0.015 0.034
N 7.62 BSC
0.3
P 3.56 3.66 0.14 0.144
P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030
Q 5.31 5.69 0.209 0.224
D
19.71 20.70 0.776 0.815
3
R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 -
4
S
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
1 Document Number: 95223
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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部品番号部品説明メーカ
VS-MBR4060WTPbF

Schottky Rectifier ( Diode )

Vishay
Vishay


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