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VS-80CPQ150-N3 の電気的特性と機能

VS-80CPQ150-N3のメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-80CPQ150-N3
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-80CPQ150-N3 Datasheet, VS-80CPQ150-N3 PDF,ピン配置, 機能
www.vishay.com
VS-80CPQ150PbF, VS-80CPQ150-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 40 A
Base
common
cathode
2
3
2
1
TO-247AC
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
13
Anode
1
2
Anode
2
Common
cathode
TO-247AC
2 x 40 A
150 V
0.71 V
26 mA at 125 °C
175 °C
Common cathode
0.5 mJ
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
Available
• Designed and qualified according to JEDEC-JESD47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-80CPQ150... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 40 Apk, TJ = 125 °C (per leg)
TJ
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VALUES
80
150
1930
0.71
- 55 to 175
UNITS
A
V
A
V
°C
VS-80CPQ150PbF VS-80CPQ150-N3
150 150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 150 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 1.0 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
40
80
1930
500
0.5
1.0
UNITS
A
mJ
A
Revision: 17-Jul-13
1 Document Number: 94257
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-80CPQ150-N3 pdf, ピン配列
www.vishay.com
VS-80CPQ150PbF, VS-80CPQ150-N3
Vishay Semiconductors
1000
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
0 0.5 1.0 1.5 2.0 2.5 3.0
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
1000
100
10
1
0.1
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0 20 40 60 80 100 120 140 160
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
TJ = 25 °C
100
0 20 40 60 80 100 120 140 160
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
1.0
0.1
0.01
0.00001
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
t1 - Rectangular Pulse Duration (s)
0.1
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1.0
Revision: 17-Jul-13
3 Document Number: 94257
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-80CPQ150-N3 電子部品, 半導体
www.vishay.com
Outline Dimensions
Vishay Semiconductors
TO-247
DIMENSIONS in millimeters and inches
B
(2) R/2
Q
2xR
(2)
(3)
E
N
S
D
12
3
(5) L1
CL
2 x b2
3xb
2x e
b4
0.10 M C A M
See view B
A
A2
A
D
A
C
A1
A
(6) Φ P
Ø KM DBM
D2
(Datum B)
Φ P1
Thermal pad
D1 (4)
4
(4)
E1
0.01 M D B M
View A - A
Planting
(b1, b3, b5)
Base metal
(c) c1
D DE E
CC
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.65 5.31 0.183 0.209
A1 2.21 2.59 0.087 0.102
D2 0.51 1.35 0.020 0.053
E
15.29 15.87 0.602 0.625
3
A2 1.17 1.37 0.046 0.054
E1
13.46
-
0.53
-
b 0.99 1.40 0.039 0.055
e
5.46 BSC
0.215 BSC
b1 0.99 1.35 0.039 0.053
Ø K 0.254
0.010
b2 1.65 2.39 0.065 0.094
b3 1.65 2.33 0.065 0.092
L 14.20 16.10 0.559 0.634
L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135
N 7.62 BSC
0.3
b5 2.59 3.38 0.102 0.133
Ø P 3.56 3.66 0.14 0.144
c 0.38 0.89 0.015 0.035
Ø P1
- 7.39 - 0.291
c1 0.38 0.84 0.015 0.033
D
19.71 20.70 0.776 0.815
3
Q 5.31 5.69 0.209 0.224
R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 -
4
S
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
Revision: 24-Sep-13
1 Document Number: 95542
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-80CPQ150-N3

Schottky Rectifier ( Diode )

Vishay
Vishay


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