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VS-50WQ03FNPbFのメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。 |
部品番号 | VS-50WQ03FNPbF |
| |
部品説明 | Schottky Rectifier ( Diode ) | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとVS-50WQ03FNPbFダウンロード(pdfファイル)リンクがあります。 Total 7 pages
VS-50WQ03FNPbF
Vishay Semiconductors
Schottky Rectifier, 5.5 A
Base
cathode
4, 2
D-PAK (TO-252AA)
1
Anode
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
D-PAK (TO-252AA)
5.5 A
30 V
See Electrical table
58 mA at 125 °C
150 °C
Single die
10 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 5 Apk, TJ = 125 °C
TJ Range
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-50WQ03FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
VALUES
5.5
30
320
0.35
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-50WQ03FNPbF
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 136 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 2 A, L = 5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
5.5
320
130
10
2.0
UNITS
A
A
mJ
A
Document Number: 94232 For technical questions within your region, please contact one of the following:
Revision: 14-Jan-11
www.vishay.com
1
1 Page Schottky Rectifier, 5.5 A
VS-50WQ03FNPbF
Vishay Semiconductors
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
1000
100
10
1.0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
0.1
0.01
TJ = 50 °C
TJ = 25 °C
0.001
0 5 10 15 20 25 30
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
TJ = 25 °C
100
0
5 10 15 20 25 30 35
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.00001
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
Document Number: 94232 For technical questions within your region, please contact one of the following:
Revision: 14-Jan-11
www.vishay.com
3
3Pages www.vishay.com
Outline Dimensions
Vishay Semiconductors
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
E
(3)
b3
A
0.010 M C A B
Ø2 4
L3 (3)
Ø1
B
D (5)
1 23
L4
AC
c2
A
Seating
plane
H
(2) L5
b2
2x e
Detail “C”
b
0.010 M C A B
A
c
Lead tip
Detail “C”
Rotated 90 °CW
Scale: 20:1
Gauge
plane
L2
Ø
(L1)
C
C
L
E1
4
D1
321
Pad layout
0.265 MIN.
(6.74)
0.488 (12.40)
0.409 (10.40)
0.245
(6.23)
MIN.
0.06 MIN.
(1.524)
0.093 (2.38)
0.085 (2.18)
0.089
(2.28)
MIN.
H (7)
C Seating
plane
A1
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 2.18 2.39 0.086 0.094
e
2.29 BSC
0.090 BSC
A1 - 0.13 - 0.005
H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035
L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045
L1
2.74 BSC
0.108 REF.
b3
4.95 5.46 0.195 0.215
3
L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024
L3
0.89 1.27 0.035 0.050
3
c2 0.46 0.89 0.018 0.035
L4 - 1.02 - 0.040
D
5.97 6.22 0.235 0.245
5
L5
1.14 1.52 0.045 0.060
2
D1 5.21 - 0.205 -
3
Ø 0° 10° 0° 10°
E
6.35 6.73 0.250 0.265
5
Ø1 0° 15° 0° 15°
E1 4.32 - 0.170 -
3
Ø2 25° 35° 25° 35°
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
Revision: 05-Dec-12
1 Document Number: 95016
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6 Page | |||
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VS-50WQ03FNPbF | Schottky Rectifier ( Diode ) | Vishay |