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VS-12TQ040SHM3 の電気的特性と機能

VS-12TQ040SHM3のメーカーはVishayです、この部品の機能は「High Performance Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-12TQ040SHM3
部品説明 High Performance Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-12TQ040SHM3 Datasheet, VS-12TQ040SHM3 PDF,ピン配置, 機能
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 15 A
Base
cathode
2
D2PAK
1
N/C
3
Anode
PRODUCT SUMMARY
IF(AV)
VR
VF at IF
IRM max.
TJ max.
EAS
Package
Diode variation
15 A
35 V, 40 V, 45 V
0.50 V
70 mA at 125 °C
150 °C
16 mJ
TO-263AB (D2PAK)
Single die
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified, meets JESD 201, class 1 whisker
test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-12TQ...SHM3 Schottky rectifier series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
Range
tp = 5 μs sine
VF 15 Apk, TJ = 125 °C
TJ Range
VALUES
15
35 to 45
990
0.50
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-12TQ035SHM3
35
VS-12TQ040SHM3
40
VS-12TQ045SHM3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 120 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 2.4 A, L = 5.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
15
990
250
16
2.4
UNITS
A
A
mJ
A
Revision: 24-Feb-15
1 Document Number: 95853
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-12TQ040SHM3 pdf, ピン配列
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 150 °C
10 TJ = 125 °C
TJ = 25 °C
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
100 TJ = 150 °C
10
1
0.1
0.01
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.001
0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
TJ = 25 °C
100
0
10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
D = 0.50
D = 0.33
D = 0.25
0.01 D = 0.17
D = 0.08
0.001
0.00001
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
.
100
Revision: 24-Feb-15
3 Document Number: 95853
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-12TQ040SHM3 電子部品, 半導体
www.vishay.com
D2PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
(2)(3)
E
A
(3) L1
4
D
1 23
L2
BB
H
(2)
Detail A
2x e
2 x b2 C
2xb
0.010 M A M B
Lead tip
A
c2
B
A
(E)
A
c
± 0.004 M B
Gauge
plane
0° to 8°
E1
View A - A
H
L3
L
L4
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
Pad layout
11.00
(0.43)
MIN.
(D1) (3)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
MIN.
(3) 2.64 (0.103)
2.41 (0.096)
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
Plating
(4)
b1, b3
Base
Metal
B
Seating
plane
(c) c1 (4)
(b, b2)
Section B - B and C - C
Scale: None
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
A 4.06 4.83 0.160 0.190
D1
6.86 8.00 0.270 0.315
3
A1 0.00 0.254 0.000 0.010
E
9.65 10.67 0.380 0.420
2, 3
b 0.51 0.99 0.020 0.039
E1
7.90 8.80 0.311 0.346
3
b1
0.51 0.89 0.020 0.035
4
b2 1.14 1.78 0.045 0.070
e
2.54 BSC
0.100 BSC
H 14.61 15.88 0.575 0.625
b3
1.14 1.73 0.045 0.068
4
L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029
L1 - 1.65 - 0.066 3
c1
0.38 0.58 0.015 0.023
4
L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065
L3 0.25 BSC 0.010 BSC
D
8.51 9.65 0.335 0.380
2
L4 4.78 5.28 0.188 0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
1 Document Number: 95046
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-12TQ040SHM3

High Performance Schottky Rectifier

Vishay
Vishay


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