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VSKT26-14S90P の電気的特性と機能

VSKT26-14S90PのメーカーはVishayです、この部品の機能は「ADD-A-PAK Generation VII Power Modules」です。


製品の詳細 ( Datasheet PDF )

部品番号 VSKT26-14S90P
部品説明 ADD-A-PAK Generation VII Power Modules
メーカ Vishay
ロゴ Vishay ロゴ 




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VSKT26-14S90P Datasheet, VSKT26-14S90P PDF,ピン配置, 機能
VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series
www.vishay.com
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 27 A
ADD-A-PAK
PRODUCT SUMMARY
IT(AV) or IF(AV)
Type
27 A
Modules - Thyristor, Standard
MECHANICAL DESCRIPTION
The ADD-A-PAK Generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
FEATURES
• High voltage
• Industrial standard package
• UL approved file E78996
• Low thermal resistance
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV) or IF(AV)
IO(RMS)
ITSM,
IFSM
85 °C
As AC switch
50 Hz
60 Hz
50 Hz
I2t
60 Hz
I2t
VRRM
TStg
TJ
Range
VALUES
27
60
400
420
800
730
8000
400 to 1600
-40 to 125
-40 to 125
UNITS
A
kA2s
kA2s
V
°C
°C
Revision: 14-Jan-14
1 Document Number: 94629
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VSKT26-14S90P pdf, ピン配列
VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
SYMBOL
PGM
PG(AV)
IGM
- VGM
VGT
IGT
VGD
IGD
TEST CONDITIONS
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V
resistive load
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V
resistive load
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
VALUES
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
0.25
6
UNITS
W
A
V
mA
V
mA
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
SYMBOL
IRRM,
IDRM
TEST CONDITIONS
TJ = 125 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz
Maximum critical rate of rise of off-state voltage dV/dt TJ = 125 °C, linear to 0.67 VDRM
VALUES
15
3000 (1 min)
3600 (1 s)
1000
UNITS
mA
V
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction operating and storage
temperature range
TJ, TStg
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
Typical thermal resistance,
case to heatsink per module
RthCS Mounting surface flat, smooth and greased
VALUES
-40 to 125
0.76
0.1
UNITS
°C
°C/W
Mounting torque ± 10 %
to heatsink
busbar
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
4
3
Nm
Approximate weight
Case style
JEDEC®
75 g
2.7 oz.
AAP GEN VII (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
30°
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
VSK.26..
0.212 0.258 0.330 0.466 0.72 0.166 0.276 0.357 0.482 0.726
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
°C/W
Revision: 14-Jan-14
3 Document Number: 94629
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VSKT26-14S90P 電子部品, 半導体
VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series
www.vishay.com
Vishay Semiconductors
1000
Per leg
100
10
Tj = 125°C
Tj = 25°C
1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Instantaneous on-state voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
10
Steady state value
RthJC = 0.76 °C/W
(DC operation)
1
0.1 Per leg
0.01
0.001
0.01
0.1
1
Square wave pulse duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
10
100
Rectangular g ate pulse
a)Recommended load line for
rated di/ dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/dt: 20 V, 65 ohms
10 tr = 1 µs, tp >= 6 µs
(a)
(b )
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
1
VGD
IGD
0.1
0.001
0.01
(4) (3) (2) (1)
IRKV.S26K... Series
Frequency Limited by PG(AV)
0.1 1 10 100 1000
Instantaneous gate current (A)
Fig. 12 - Gate Characteristics
Revision: 14-Jan-14
6 Document Number: 94629
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VSKT26-14S90P

ADD-A-PAK Generation VII Power Modules

Vishay
Vishay


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