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VS-VSKT152-04PbF の電気的特性と機能

VS-VSKT152-04PbFのメーカーはVishayです、この部品の機能は「Thyristor/Thyristor」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-VSKT152-04PbF
部品説明 Thyristor/Thyristor
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-VSKT152-04PbF Datasheet, VS-VSKT152-04PbF PDF,ピン配置, 機能
www.vishay.com
VS-VSKT152/04PbF
Vishay Semiconductors
Thyristor/Thyristor, 150 A
(New INT-A-PAK Power Module)
New INT-A-PAK
PRODUCT SUMMARY
IT(AV)
150 A
Type
Modules - Thyristor, Standard
Package
INT-A-PAK
Circuit
Two SCRs doubler circuit
FEATURES
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Simple mounting
• UL approved file E78996
• Designed and qualified for multiple level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Battery charges
• Welders
• Power converters
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV)
IT(RMS)
ITSM
85 °C
50 Hz
60 Hz
50 Hz
I2t
60 Hz
I2t
VRRM
TStg
TJ
Range
Range
VALUES
150
330
4000
4200
80
73
800
400
-40 to 150
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VS-VSKT152/04PbF
400
VRSM/VDSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
UNITS
A
A
kA2s
kA2s
V
°C
IRRM/IDRM
AT 125 °C
mA
50
Revision: 11-Apr-14
1 Document Number: 94514
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-VSKT152-04PbF pdf, ピン配列
www.vishay.com
VS-VSKT152/04PbF
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC gate
voltage to trigger
Maximum required DC gate
current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
SYMBOL
PGM
PG(AV)
IGM
- VGT
TEST CONDITIONS
tp 5 ms, TJ = TJ maximum
f = 50 Hz, TJ = TJ maximum
tp 5 ms, TJ = TJ maximum
TJ = - 40 °C
VGT TJ = 25 °C
TJ = TJ maximum
TJ = - 40 °C
IGT TJ = 25 °C
TJ = TJ maximum
Anode supply = 6 V,
resistive load; Ra = 1
VGD
TJ = TJ maximum, rated VDRM applied
IGD
dI/dt
TJ = TJ maximum, ITM = 400 A rated VDRM applied
VALUES
12
3
3
10
4
2.5
1.7
270
150
80
0.3
10
300
UNITS
W
A
V
mA
V
mA
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
TJ
TStg
RthJC
RthCS
DC operation
Mounting surface smooth, flat and greased
Mounting
torque ± 10 %
IAP to heatsink
busbar to IAP
Approximate weight
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
Case style
VALUES
- 40 to 125
- 40 to 150
0.18
0.05
UNITS
°C
K/W
4 to 6
Nm
200
7.1
INT-A-PAK
g
oz.
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
180° 120° 90°
60°
30°
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
180° 120°
90°
60°
30°
VSKT152/04PbF 0.007 0.010 0.013 0.016 0.017 0.009 0.012 0.014 0.016 0.017
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Revision: 11-Apr-14
3 Document Number: 94514
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-VSKT152-04PbF 電子部品, 半導体
www.vishay.com
1000
100
VS-VSKT152/04PbF
Vishay Semiconductors
1
Steady State Value
RthJC = 0.182 K/W
(DC Operation)
0.1
10 Tj = 25˚C
Tj = 125˚C
VSKT152
Per Junction
1
0.5 1 1.5 2 2.5
Instantaneous On-state Voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
0.01
VSKT152
0.001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
100
10
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
(b)
(a)
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
1
VGD
IGD
0.1
0.001
0.01
(4) (3) (2) (1)
VSKT152
Frequency Limited by PG(AV)
0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 12 - Gate Characteristics
1000
Revision: 11-Apr-14
6 Document Number: 94514
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-VSKT152-04PbF

Thyristor/Thyristor

Vishay
Vishay


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