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VS-VSKJ320-08PBF の電気的特性と機能

VS-VSKJ320-08PBFのメーカーはVishayです、この部品の機能は「Standard Recovery Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-VSKJ320-08PBF
部品説明 Standard Recovery Diodes
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-VSKJ320-08PBF Datasheet, VS-VSKJ320-08PBF PDF,ピン配置, 機能
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes, 250 A to 320 A
(MAGN-A-PAK Power Modules)
MAGN-A-PAK
PRODUCT SUMMARY
IF(AV)
Type
250 A to 320 A
Modules - Diode, High Voltage
Package
MAGN-A-PAK
Circuit
Two diodes doubler circuit
FEATURES
• High voltage
• Electrically isolated base plate
• 3000 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This new VS-VSK series of MAGN-A-PAKs uses
high voltage power diodes in two basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a
freewheel diode. These modules are intended for general
purpose applications such as battery chargers, welders and
plating equipment and where high voltage and high current
are required (motor drives, etc.).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.250..
IF(AV)
IF(RMS)
IFSM
TC
50 Hz
60 Hz
250
100
393
7015
7345
50 Hz
I2t
60 Hz
246
225
I2t 2460
VRRM
TJ
VSK.270..
270
100
424
8920
9430
398
363
3980
400 to 3000
-40 to +150
VSK.320..
320
100
502
10 110
10 580
511
466
5110
UNITS
A
°C
A
kA2s
kA2s
V
°C
Revision: 28-May-14
1 Document Number: 93581
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-VSKJ320-08PBF pdf, ピン配列
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
VSK.250 VSK.270 VSK.320
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum resistance, case to heatsink
per module
TJ, TStg
RthJC
RthCS
DC operation
Mounting surface flat, smooth and
greased
-40 to +150
0.16 0.125
0.035
°C
K/W
Mounting torque
± 10 %
MAP to heatsink
busbar to MAP
A mounting compound is recommended
and the torque should be rechecked
after a period of about 3 hours to allow for
the spread of the compound.
4 to 6
8 to 10
Nm
Approximate weight
800 g
30 oz.
Case style
MAGN-A-PAK
R CONDUCTION PER JUNCTION
DEVICE
180°
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
120°
90°
60°
30°
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
180° 120°
90°
60°
30°
UNITS
VSK.250
0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.021 0.033
VSK.270
0.008 0.012 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
K/W
VSK.320
0.008 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 28-May-14
3 Document Number: 93581
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-VSKJ320-08PBF 電子部品, 半導体
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
10000
TJ= 25°C
1000
TJ= 150°C
100
VSK.250.. Series
Per Junc tion
10
0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous Forward Voltage (V)
Fig. 10 - Forward Voltage Drop Characteristics
150
VSK.270.. Series
140 R thJC(DC) = 0.125 K/ W
130
120
Conduction Period
110
100
90
80
0
30°
60°
90°
120°
180°
DC
100 200 300 400
500
Average Forward Current (A)
Fig. 13 - Current Ratings Characteristics
1
Steady State Value:
RthJC = 0.16 K/ W
(DC Operation)
0.1
0.01
VSK.250.. Series
Per Junction
0.001
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
150
VSK.270.. Series
140 RthJC (DC) = 0.125 K/ W
130
120 Conduction Angle
110
100
90
80
0
30°
60°
90°
120°
180°
50 100 150 200 250 300
Average Forward Current (A)
Fig. 12 - Current Ratings Characteristics
400
350
180°
300 120°
90°
250 60°
30°
200
RM S Lim it
150
100
50
0
0
Conduc tion Angle
VSK.270.. Series
TJ= 150°C
50 100 150 200 250
Average Forward Current (A)
300
Fig. 14 - Forward Power Loss Characteristics
500
450 DC
180°
400 120°
90°
350 60°
300 30°
RMSLimit
250
200
150 Conduction Period
100 VSK.270.. Series
50 TJ= 150°C
0
0 50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Fig. 15 - Forward Power Loss Characteristics
Revision: 28-May-14
6 Document Number: 93581
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-VSKJ320-08PBF

Standard Recovery Diodes

Vishay
Vishay


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