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PDF TSM950N10 Data sheet ( Hoja de datos )

Número de pieza TSM950N10
Descripción N-Channel Power MOSFET / Transistor
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! TSM950N10 Hoja de datos, Descripción, Manual

TSM950N10
Taiwan Semiconductor
N-Channel Power MOSFET
100V, 6.5A, 95mΩ
FEATURES
100% avalanche tested
Fast switching
Pb-free plating
RoHS compliant
Halogen-free mold compound
APPLICATION
Networking
Load Switch
Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = 10V
VGS = 4.5V
Qg
100
95
110
9.3
V
mΩ
nC
SOT-223
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS 100
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
VGS
ID
IDM
±20
6.5
4.1
26
Total Power Dissipation @ TC = 25°C
PDTOT
9
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
UNIT
V
V
A
A
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
14 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
TYP
MAX UNIT
Document Number: DS_P0000183
1
Version: A15

1 page




TSM950N10 pdf
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
SOT-223
TSM950N10
Taiwan Semiconductor
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul V =Aug
W =Sep X =Oct Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000183
5
Version: A15

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