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PDF TSM60N1R4 Data sheet ( Hoja de datos )
| Número de pieza | TSM60N1R4 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TO-252
(DPAK)
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
TSM60N1R4
600V, 3.3A, 1.4Ω
N-Channel Power MOSFET
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
Qg
600
1.4
7.7
Unit
V
Ω
nC
Features
● Super-Junction technology
● High performance due to small figure-of-merit
● High ruggedness performance
● High commutation performance
Application
● Power Supply
● Lighting
Ordering Information
Part No.
Package
Packing
TSM60N1R4CH C5G TO-251
75pcs / Tube
TSM60N1R4CP ROG TO-252 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
RӨJC
RӨJA
Block Diagram
N-Channel MOSFET
Limit
600
±30
3.3
9.9
38
64
1.6
- 55 to +150
Limit
3.3
62
Unit
V
V
A
A
W
mJ
A
°C
Unit
°C/W
°C/W
1/7 Version: A14
1 page  
TSM60N1R4
600V, 3.3A, 1.4Ω
N-Channel Power MOSFET
TO-251 (IPAK) Mechanical Drawing
Unit: Millimeter
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/7 Version: A14
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TSM60N1R4.PDF ] | |
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