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PDF TSM60N06 Data sheet ( Hoja de datos )
| Número de pieza | TSM60N06 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
TSM60N06
60V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
60 7.3 @ VGS =10V
ID (A)
66
Features
● Advanced Trench Technology
● Low RDS(ON) 7.3mΩ (Max.)
● Low gate charge typical @ 81nC (Typ.)
● Low Crss typical @ 339pF (Typ.)
Ordering Information
Part No.
Package
Packing
TSM60N06CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (TC = 25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed Note 1
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
TC = 25℃
TC = 70℃
TA = 25℃
TA = 70℃
TC = 25℃
TC = 70℃
TA = 25℃
TA = 70℃
VDS
VGS
ID
IDM
IAS, IAR
EAS, EAR
PD
TSTG
TJ
* Limited by maximum junction temperature
Limit
60
±20
66
53
13
10
150
53
400
44.6
28.6
2
1.3
-55 to +150
-55 to +150
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RӨJC
RӨJA
Limit
2.8
62
Unit
V
V
A
A
A
mJ
W
℃
℃
Unit
℃/W
℃/W
1/4 Version: A12
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TSM60N06.PDF ] | |
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