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VS-25RIA40 の電気的特性と機能

VS-25RIA40のメーカーはVishayです、この部品の機能は「Medium Power Phase Control Thyristors」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-25RIA40
部品説明 Medium Power Phase Control Thyristors
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-25RIA40 Datasheet, VS-25RIA40 PDF,ピン配置, 機能
www.vishay.com
VS-25RIA Series
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 25 A
TO-208AA (TO-48)
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
TO-208AA (TO-48)
Single SCR
25 A
100 V to 1200 V
1.70 V
60 mA
-65 °C to 125 °C
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V VDRM/VRRM
• Designed and qualified for industrial and consumer level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
25
85
40
420
440
867
790
100 to 1200
110
-65 to 125
UNITS
A
°C
A
A
A2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE (1)
V
10 100
20 200
VS-25RIA
40
60
400
600
80 800
100 1000
120 1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE (2)
V
150
300
500
700
900
1100
1300
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
20
10
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2) For voltage pulses with tp 5 ms
Revision: 11-Mar-14
1 Document Number: 93701
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-25RIA40 pdf, ピン配列
www.vishay.com
VS-25RIA Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
PGM
PG(AV)
IGM
-VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
TJ = TJ maximum
TJ = TJ maximum
TJ = TJ maximum
TJ = - 65 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 65 °C
TJ = 25 °C
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
TJ = 125 °C
TJ = TJ maximum, VDRM = Rated value
Maximum gate current/voltage
TJ = TJ maximum,
VDRM = Rated value
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
2.0
0.2
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction
and storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Allowable mounting torque
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
- 65 to 125
UNITS
°C
0.75
K/W
0.35
3.4 + 0 - 10 %
(30)
23 + 0 - 10 %
(20)
N·m
(lbf in)
14 g
0.49 oz.
TO-208AA (TO-48)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.17
0.13
120°
0.21
0.22
90° 0.27
60° 0.40
0.30
0.42
TJ = TJ maximum
K/W
30° 0.69
0.70
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
3 Document Number: 93701
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-25RIA40 電子部品, 半導体
www.vishay.com
VS-25RIA Series
Vishay Semiconductors
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 10V, 20ohms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 65ohms
10 tr<=1 µs, tp >= 6 µs
(b)
(a)
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
1
VGD
IGD
0.1
0.001
0.01
(4)
(1) (2) (3)
25RIA Series Frequency Limited by PG(AV)
0.1 1
Instantaneous Gate Current (A)
10
100
Fig. 8 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code VS- 25 RIA 120 M S90
1 2 3 456
1 - Vishay Semiconductors product
2 - Current code
3 - Essential part number
4 - Voltage code x 10 = VRRM (see Voltage Ratings table)
5 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 x 1
6 - Critical dV/dt:
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95333
Revision: 11-Mar-14
6 Document Number: 93701
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-25RIA40

Medium Power Phase Control Thyristors

Vishay
Vishay


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