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VS-181RKI40 の電気的特性と機能

VS-181RKI40のメーカーはVishayです、この部品の機能は「Phase Control Thyristors」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-181RKI40
部品説明 Phase Control Thyristors
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-181RKI40 Datasheet, VS-181RKI40 PDF,ピン配置, 機能
www.vishay.com
VS-180RKI...PbF, VS-181RKI...PbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 180 A
TO-209AB (TO-93)
PRODUCT SUMMARY
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
Package
Diode variation
180 A
400 V, 800 V, 1000 V
1.35 V
65 mA
-40 °C to 125 °C
TO-209AB (TO-93)
Single SCR
FEATURES
• Hermetic glass-metal seal
• International standard case TO-209AB (TO-93)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
180
80
285
3800
4000
72
66
400 to 1000
100
-40 to 125
UNITS
A
°C
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
PART NUMBER
VOLTAGE
CODE
VS-180RKI
VS-181RKI
40
80
100
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1000
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
500
900
1100
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
30
Revision: 11-Mar-14
1 Document Number: 94382
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-181RKI40 pdf, ピン配列
www.vishay.com
VS-180RKI...PbF, VS-181RKI...PbF Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
PGM
PG(AV)
IGM
+ VGM
- VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = TJ maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
VALUES
TYP. MAX.
10
2.0
3.0
20
5.0
130 -
65 150
35 -
2.0 -
1.2 2.5
0.9 -
UNITS
W
A
V
mA
V
10 mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction
temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
TStg
RthJC
RthCS
DC operation
Mounting surface, smooth, flat and greased
Mounting force, ± 10 %
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
-40 to 150
°C
0.15
K/W
0.04
31
(275)
24.5
(210)
N·m
(lbf · in)
280 g
TO-209AB (TO-93)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180°
0.050
0.032
120°
0.063
0.059
90° 0.080
60° 0.118
0.082
0.124
TJ = TJ maximum
K/W
30° 0.225
0.228
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
3 Document Number: 94382
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-181RKI40 電子部品, 半導体
www.vishay.com
VS-180RKI...PbF, VS-181RKI...PbF Series
Vishay Semiconductors
100
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
tr ≤ 0.5 μs, tp ≥ 6 μs
10
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
tr ≤ 1 μs, tp ≥ 6 μs
(b)
(a)
(1) PGM = 12 W, tp = 5 ms
(2) PGM = 30 W, tp = 2 ms
(3) PGM = 60 W, tp = 1 ms
(4) PGM = 200 W, tp = 300 μs
1
0.1
0.001
94382_09
VGD
IGD
0.01
(1) (2) (3)
(4)
0.1 1 10
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Frequency limited by PG(AV)
100 1000
ORDERING INFORMATION TABLE
Device code VS- 18 1 RKI 100 PbF
1 2 3 456
1 - Vishay Semiconductors product
2 - IT(AV) rated average output current (rounded/10)
3-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
4 - Thyristor
5 - Voltage code x 10 = VRRM (see Voltage Ratings table)
6-
None = Standard production
PbF = Lead (Pb)-free
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95077
Revision: 11-Mar-14
6 Document Number: 94382
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-181RKI40

Phase Control Thyristors

Vishay
Vishay


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