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VS-16RIA120 の電気的特性と機能

VS-16RIA120のメーカーはVishayです、この部品の機能は「Medium Power Phase Control Thyristors」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-16RIA120
部品説明 Medium Power Phase Control Thyristors
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-16RIA120 Datasheet, VS-16RIA120 PDF,ピン配置, 機能
www.vishay.com
VS-16RIA Series
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 16 A
TO-208AA (TO-48)
PRODUCT SUMMARY
Package
TO-208AA (TO-48)
Diode variation
Single SCR
IT(AV)
VDRM/VRRM
16 A
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
VTM 1.75 V
IGT 60 mA
TJ -65 °C to 125 °C
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V VDRM/VRRM
• Designed and qualified for industrial and consumer level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
16
85
35
340
360
574
524
100 to 1200
110
-65 to 125
UNITS
A
°C
A
A
A2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM
AND OFF-STATE VOLTAGE (1)
PEAK VOLTAGE (2)
AT TJ = TJ MAXIMUM
V V mA
10 100
150 20
20 200
300
40 400
500
VS-16RIA
60
80
600
800
700
10
900
100 1000
1100
120 1200
1300
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2) For voltage pulses with tp 5 ms
Revision: 11-Mar-14
1 Document Number: 93695
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-16RIA120 pdf, ピン配列
www.vishay.com
VS-16RIA Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
PGM
PG(AV)
IGM
-VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
TJ = TJ maximum
TJ = TJ maximum
TJ = TJ maximum
TJ = - 65 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 65 °C
TJ = 25 °C
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
TJ = 125 °C
TJ = TJ maximum, VDRM = Rated value
TJ = TJ maximum,
VDRM = Rated value
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
2.0
0.2
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthCS
DC operation
Mounting surface, smooth, flat and greased
-65 to 125
0.86
0.35
°C
K/W
TO NUT TO DEVICE
Mounting torque
Lubricated threads
(Non-lubricated threads)
20 (27.5)
25 lbf in
0.23 (0.32) 0.29 kgf · m
2.3 (3.1)
2.8 N · m
Approximate weight
14 g
0.49 oz.
Case style
See dimensions - link at the end of datasheet
TO-208AA (TO-48)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
180°
0.21
0.15
120°
0.25
0.25
90° 0.31
60° 0.45
0.34
0.47
TJ = TJ maximum
30° 0.76
0.76
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Revision: 11-Mar-14
3 Document Number: 93695
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-16RIA120 電子部品, 半導体
www.vishay.com
VS-16RIA Series
Vishay Semiconductors
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 10V, 20ohms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 65ohms
10 tr<=1 µs, tp >= 6 µs
(b)
(a)
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
1
VGD
IGD
0.1
0.001
(4)
(1) (2) (3)
0.01
16RIA Series Frequency Limited by PG(AV)
0.1 1
Instantaneous Gate Current (A)
10
100
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code VS- 16 RIA 120 M S90
1 2 3 456
1 - Vishay Semiconductors product
2 - Current code
3 - Essential part number
4 - Voltage code x 10 = VRRM (see Voltage Ratings table)
5 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 x 1
6 - Critical dV/dt:
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95333
Revision: 11-Mar-14
6 Document Number: 93695
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-16RIA120

Medium Power Phase Control Thyristors

Vishay
Vishay


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