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VS-ST223C04CFN0 の電気的特性と機能

VS-ST223C04CFN0のメーカーはVishayです、この部品の機能は「Inverter Grade Thyristors」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-ST223C04CFN0
部品説明 Inverter Grade Thyristors
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-ST223C04CFN0 Datasheet, VS-ST223C04CFN0 PDF,ピン配置, 機能
www.vishay.com
VS-ST223C..C Series
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 390 A
TO-200AB (A-PUK)
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
ITSM at 50 Hz
ITSM at 60 Hz
IGT
TC/Ths
TO-200AB (A-PUK)
Single SCR
390 A
400 V, 800 V
1.58 V
5260 A
5510 A
200 mA
55 °C
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case TO-200AB (A-PUK)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
Ths
Ths
50 Hz
60 Hz
50 Hz
60 Hz
Range
VALUES
390
55
745
25
5850
6130
171
156
400 to 800
10 to 30
-40 to +125
UNITS
A
°C
A
°C
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VS-ST223C..C
04
08
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
40
Revision: 02-Jun-15
1 Document Number: 93672
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-ST223C04CFN0 pdf, ピン配列
www.vishay.com
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage
current
VS-ST223C..C Series
Vishay Semiconductors
SYMBOL
dV/dt
IRRM,
IDRM
TEST CONDITIONS
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES
500
UNITS
V/μs
40 mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
PGM
PG(AV)
IGM
+VGM
-VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM applied
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
TJ
TStg
RthJ-hs
RthC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
-40 to +125
-40 to +150
0.17
0.08
0.033
0.017
°C
K/W
Mounting force, ± 10 %
4900
(500)
N
(kg)
Approximate weight
50 g
Case style
See dimensions - link at the end of datasheet TO-200AB (A-PUK)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
Single Side
Double Side
RECTANGULAR CONDUCTION
Single Side
Double Side
TEST CONDITIONS
UNITS
180°
0.015
0.017
0.011
0.011
120°
0.019
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
TJ = TJ maximum
K/W
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 02-Jun-15
3 Document Number: 93672
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-ST223C04CFN0 電子部品, 半導体
www.vishay.com
VS-ST223C..C Series
Vishay Semiconductors
1E4
1E3
1E2
1E1
Snubb er c ircuit
Rs = 47 ohms
C s = 0.22 µ F
V D = 80% V DRM
1000 500 400 200 100 50 Hz
1 50 0
2 50 0
3 00 0
5 00 0
1 0 00 0
ST2 23 C.. C Serie s
Sinuso idal pulse
tp TC = 40°C
Snubbe r circ uit
Rs = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
1000 500 400 200 100 50 Hz
1 50 0
2 50 0
3 00 0
5 00 0
10 00 0
ST2 23 C.. C Se ries
Sinuso idal pulse
t p TC = 55°C
1E2 1E3
P u lse Ba se w id t h (µ s)
1 E 4 1 E11E 1
Fig. 13 - Frequency Characteristics
1E2 1E3
P u lse Ba se w id t h (µ s)
1E4
1E4
Snu bbe r c irc uit
R s = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
1E3 2500 1500 1000 500
3 00 0
5 00 0
400 200 100
50 Hz
1E2 10000
1E1
1E1
ST22 3C ..C Se rie s
Tra pe zoidal pulse
tp
TC = 40°C
di/dt = 5 0A /µ s
1E2 1E3
P u lse B ase w idt h (µ s)
1E4
Snubbe r circ uit
Rs = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
2500 1500 1000 500 400 200 100
3 00 0
50 Hz
5 00 0
1 00 00
ST2 23 C..C Series
Trape zoidal pulse
tp
TC = 55°C
di/dt = 50A /µs
1E1 1E2 1E3 1E4
P u lse Ba se w id t h (µ s)
Fig. 14 - Frequency Characteristics
1E4
Snubb er c ircu it
R s = 47 ohms
C s = 0 .22 µF
V D = 80% V DRM
1E3 1000 500 400 200 100 50 Hz
1 50 0
25 0 0
3 00 0
5 00 0
1E2
1 00 0 0
ST223 C. .C Se ries
Tra pezo idal pulse
tp
TC = 40°C
di/d t = 1 00A /µs
Snubbe r circ uit
Rs = 47 ohms
C s = 0.2 2 µF
V D = 80% V DRM
400 200 100 50 Hz
1500 1000 500
2 50 0
3 000
5 00 0
10 00 0
ST223 C. .C Se ries
Trap ezo id al p ulse
tp
TC = 55°C
di/dt = 10 0A /µs
1E1
1E1
1E2 1E3
P u lse B ase w id t h (µ s)
1E4
1E1 1E2 1E3 1E4
P u lse Ba se w id t h (µ s)
Fig. 15 - Frequency Characteristics
Revision: 02-Jun-15
6 Document Number: 93672
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-ST223C04CFN0

Inverter Grade Thyristors

Vishay
Vishay
VS-ST223C04CFN1

Inverter Grade Thyristors

Vishay
Vishay


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